2017

2016

2015

2014

2013

  • Hoogland, Heinar; Thai, A.; Sánchez, D.; Cousin, S.L.; Hemmer, M.; Engelbrecht, M.; Biegert, J.; Holzwarth, R.;
    All-PM coherent 2.05 µm Thulium/Holmium fiber frequency comb source at 100 MHz with up to 0.5 W average power and pulse duration down to 135 fs
    Opt. Expr. 21, 31390 (2013).
    http://dx.doi.org/10.1364/OE.21.031390

  • Bashouti, Muhammad Y.; Ristein, Jürgen; Haick, Hossam; Christiansen, Silke H.;
    A Non-Oxidative Approach Towards Hybrid Silicon Nanowire- Based Solar Cell Heterojunctions
    Hybrid Materials 1, 2 (2013).
  • Ley, Lothar; Smets, Yaou; Pakes, Christopher I.; Ristein, Jürgen;
    Calculating the Universal Energy –Level Alignment of Organic Molecules on Metal Oxides
    Advanced Functional Materials 23, 794 (2013).
  • Rietwyk, K.J.; Smets, Yaou; Bashouti, Muhammad Y.; Christiansen, Silke H.; Tadich, A.; Edmonds, M.T.; Ristein, Jürgen; Ley, Lothar; Pakes, Chritopher I.;
    Charge transfer doping of Silicon
    Phys. Rev. Lett. n/a, n/a (2013).
  • Fromm, Felix; Oliverira, M.H. Jr.; Molina-Sánchez, A.; Hundhausen, Martin; Lopes, J.M.J.; Riechert, H.; Wirtz, L.; Seyller, Th.;
    Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001)
    n/a n/a, n/a (2013).
  • O'Donnel, K.M.; Edmonds, M.T.; Ristein, Jürgen; Tadich, A.; Thomsen, L.; Wu, Qihui; Pakes, Christopher I.; Ley, Lothar;
    Diamond surfaces with air-stable negative electron affinity and giant electron yield enhancement
    Adv. Funct. Mat. 23, 5608-5614 (2013).
  • Yalunin, Sergey V.; Herink, Georg; Solli, Daniel R.; Krüger, Michael; Hommelhoff, Peter; Diehn, Manuel; Munk, Axel; Ropers, Claus;
    Field localization and rescattering in tip-based photoemission
    Annalen der Physik 525, L12-L18 (2013).
  • Krüger, Michael; Schenk, Markus; Breuer, John; Förster, Michael; Hammer, Jakob; Hoffrogge, Johannes; Thomas, Sebastian; Hommelhoff, Peter;
    From Above-Threshold Photoemission to Attosecond Physics at a Nanometric Tungsten Tip
    Progress in Ultrafast Intense Laser Science IX, 213-224 Heidelberg (2013).
  • Bashouti, Muhammad Y.; Pietsch, Matthias; Brönstrup, Gerald; Sivakov, Vladimir; Ristein, Jürgen; Chritiansen, Silke H.;
    Heterojunction based hybrid silicon nanowire solar cell: surface termination, photoelectron and photoemission spectroscopy study
    Prog. Photovolt: Res. Appl. , n/a (2013).
  • Bashouti, Muhammad Y.; Sardashti, Kasra; Ristein, Jürgen; Christiansen, Silke H.;
    Kinetic study of H-terminated silicon nanowires oxidation in very first stages
    Nanoscale Research Letters 8, 41 (2013).
  • Breuer, John; Hommelhoff, Peter;
    Laser-based acceleration of nonrelativistic electrons at a dielectric structure
    Phys. Rev. Lett. 111, 134803 (2013).
  • Thomas, Sebastian; Krüger, Michael; Breuer, John; Förster, Michael; Hommelhoff, Peter;
    Ultrashort laser oscillator pulses meet nano-structures: from attosecond physics at metal tips to dielectric laser accelerators
    J. Phys. Conference Series 467, 012004 (2013).
    http://iopscience.iop.org/1742-6596/467/1/012004/

  • Bashouti, Muhammad Y.; Sardashti, Kasra; Schmitt, Sebastian W.; Pietsch, Matthisa; Ristein, Jürgen; Haick, Hossam; Chritiansen, Silke H.;
    Oxide-free hybrid silicon nanowires: From fundamentals to applied nanotechnology
    Progress in Surface Science 88, 39 (2013).
  • Thomas, Sebastian; Krüger, Michael; Förster, Michael; Schenk, Markus; Hommelhoff, Peter;
    Probing of optical near-fields by electron rescattering on the 1nm scale
    Nano Lett. 13, 4790-4794 (2013).
    http://dx.doi.org/10.1021/nl402407r

  • Ott, C.; Schönwald, M.; Raith, P.; Kaldum, A.; Sansone, G.; Krüger, Michael; Hommelhoff, Peter; Patil, Y.; Zhang, Y.; Meyer, K.; Laux, M.; Pfeifer, T.;
    Strong-Field Spectral Interferometry using the Carrier-Envelope Phase
    New J. Phys. 15, 073031 (2013).
    http://iopscience.iop.org/1367-2630/15/7/073031/

  • Hommelhoff, Peter; Kling, Matthias F.; Stockman, Mark I.;
    Ultrafast phenomena on the nanoscale
    Annalen der Physik Special Issue: Ultrafast Phenomena on the Nanoscale 525, A13-A14 (2013).
    http://onlinelibrary.wiley.com/doi/10.1002/andp.201300709/abstract

2012

2011

2010

2009

2008

  • Hundhausen, Martin; Püsche, R.; Röhrl, J.; Ley, Lothar;
    Characterization of defects in silicon carbide by Raman spectroscopy
    Phys. Stat. Sol. (b) 254, 1356 (2008).
  • Syrgiannis, Z.; Hauke, Frank; Röhrl, J.; Hundhausen, Martin; Graupner, Ralf; Elemes, Y.; Hirsch, A.;
    Covalent Sidewall Functionalization of SWNTs by Nucleophilic Addition of Lithium Amides
    Eur. J. Org. Chem. n/a, 2544 (2008).
  • Röhrl, J.; Hundhausen, Martin; Emtsev, K.V.; Seyller, Th.; Ley, Lothar;
    Graphene layers on silicon carbide studied by Raman spectroscopy
    Mat. Sci. Forum 600-603, 567 (2008).
  • Lazea, A.; Mortet, V.; D’Heaen, J.; Geithner, P.; Ristein, Jürgen; D’Olieslaeger, M.; Haenen, K.;
    Growth of polycrystalline phosphourous-doped CVD diamond layers
    Chem. Phys. Lett. 454, 310 (2008).
  • Ristein, Jürgen; Yhang, W.; Ley, Lothar;
    Hydrogen-terminated diamond electrodes: I. Charges, potentials, energies
    Phys. Rev. E 78, 041602 (2008).
  • Zhang, Wenying; Ristein, Jürgen; Ley, Lothar;
    Hydrogen-terminated diamond electrodes: II. Redox activity
    Phys. Rev. E 78, 041603 (2008).
  • Mareš, J.J.; Hubík, P.; Krištofik, J.; Ristein, Jürgen; Strobel, Paul; Ley, Lothar;
    Influence of ambient humidity on the surface conductivity of hydrogenated diamond
    Diam. Rel. Mat. 17, 1356 (2008).
  • Röhrl, J.; Hundhausen, Martin; Emtsev, K.V.; Seyller, Th.; Graupner, Ralf; Ley, Lothar;
    Raman spectra of epitaxial graphene on SiC(0001)
    Appl. Phys. Lett. 92, 201918 (2008).

2007

  • Hommelhoff, Peter; Kealhofer, Catherine; Kasevich, Mark A.;
    A spatially and temporally localized sub-laser cycle electron source
    Ultrafast Phenomena XV , 746 Berlin, Heidelberg, New York (2007).
  • Semmelroth, K.; Krieger, Michael; Pensl, Gerhard; Nagasawa, H.; Püsche, R.; Hundhausen, Martin; Ley, Lothar; Nerding, M.; Strunk, H.P.;
    Growth of cubic SiC single crystals by the physical vapor transport technique
    Journ. Cryst. Growth 308, 241 (2007).
  • Treutlein, Philipp; Steinmetz, Tilo; Colombe, Yves; Lev, Benjamin; Hommelhoff, Peter; Reichel, Jakob; Greiner, Markus; Mandel, Olaf; Widera, Artur; Rom, Tim; Bloch, Immanuel; Hänsch, Theodor W.;
    Quantum Information Processing in Optical Lattices and Magnetic Microtraps
    Elements of Quantum Information , 121-144 Weinheim, Germany (2007).

2006

  • Ristein, Jürgen;
    Diamond surfaces: familiar and amazing
    Appl. Phys. A 82, 337 (2006).
  • Püsche, R.; Hundhausen, Martin; Ley, Lothar; Semmelroth, K.; Pensl, Gerhard; Desperrier, P.; Wellmann, P.; Haller, E.; Ager, J.; Starke, Ulrich;
    Electronic Raman studies of shallow donors in Silicon Carbide
    Mat. Sci. Forum 527-529, 579 (2006).
  • Hommelhoff, Peter; Kealhofer, Catherine; Kasevich, Mark A.;
    Femtosecond laser meets field emission tip - a sensor for the carrier envelope phase?
    Proceedings of the 2006 IEEE International Frequency Control Symposium and Expositions 1, 2, 470-474 Miami, FL, USA, (2006).
  • Hommelhoff, Peter; Sortais, Yvan R.P.; Aghajani-Talesh, Anoush; Kasevich, Mark A.;
    Field Emission Tip as a Nanometer Source of Free Electron Femtosecond Pulses
    Phys. Rev. Lett. 96, 077401 (2006).
    http://link.aps.org/abstract/PRL/v96/e077401

  • Graupner, Ralf; Abraham, J.; Vencelov, A.; Lauffer, P.; Röhrl, J.; Hundhausen, Martin; Ley, Lothar; Hirsch, A.;
    Nucleophilic-Alkylation-Reoxidation: A Functionalization Sequence for Single- Wall Carbon Nanotubes
    J. Am. Chem. Soc. 128, 6683 (2006).
  • Treutlein, Philipp; Steinmetz, Tilo; Colombe, Yves; Lev, Benjamin; Hommelhoff, Peter; Reichel, Jakob; Greiner, Markus; Mandel, Olaf; Widera, Artur; Rom, Tim; Bloch, Immanuel; Hänsch, Theodor W.;
    Quantum information processing in optical lattices and magnetic microtraps
    Fortschritte der Physik 54, 702-718 (2006).
    http://www3.interscience.wiley.com/cgi-bin/abstract/112736872/ABSTRACT

  • Ristein, Jürgen;
    Surface transfer doping of diamond
    J. Phys. D: Appl. Phys. 39, R71 (2006).
  • Ristein, Jürgen;
    Surface science of diamond: familiar and amazing
    Surf. Science 600, 3677 (2006).
  • Ristein, Jürgen;
    Surface transfer doping of semiconductors
    Science 313, 1057 (2006).
  • Strobel, Paul; Ristein, Jürgen; Ley, Lothar; Seppelt, K.; Goldt, I.V.; Boltalina, Olga;
    Surface conductivity induced by fullerenes on diamond: passivation and thermal stability
    Diam. Rel. Mat. 15, 720 (2006).
  • Ley, Lothar; Ristein, Jürgen; Maier, Frederic; Riedel, Marc; Strobel, Paul;
    Surface conductivity of diamond: a novel transfer doping mechanism
    Physica B 376-377, 262 (2006).
  • Ristein, Jürgen; Strobel, Paul; Ley, Lothar;
    Surface conductivity of diamond: a novel doping mechanism
    Adv. in Science and Technol. 48, 93 (2006).
  • Hommelhoff, Peter; Kealhofer, Catherine; Kasevich, Mark A.;
    Ultrafast electron pulses from a tungsten tip triggered by low power femtosecond laser pulses
    Phys. Rev. Lett. 97, 247402 (2006).
    http://link.aps.org/abstract/PRL/v97/e247402

2005

  • Larsson, K.; Ristein, Jürgen;
    Diamond surface conductivity under atmospheric conditions; theoretical approach
    J. Phys. Chem. 109, 10304 (2005).
  • Wellmann, P.J.; Herro, Z; Winnacker, Albrecht; Pücshe, R.; Hundhausen, Martin; Masri, P.; Kulik, A.; Bogdanov, M.; Karpov, S.; Ramm, M.; Makarov, Y.;
    In situ visualization of SiC physical vapor transport crystal growth
    Journ. Cryst. Growth 275, e1807 (2005).
  • Strobel, Paul; Riedel, Marc; Ristein, Jürgen; Ley, Lothar; Boltalina, Olga;
    Surface transfer doping of diamond by fullerene
    Diam. Rel. Mat. 14, 451 (2005).
  • Ristein, Jürgen;
    The physics of hydrogen-terminated diamond surfaces
    AIP Conf. Proc. 772, 377 (2005).
  • Hommelhoff, Peter; Hänsel, Wolfgang; Steinmetz, Tilo; Hänsch, Theodor W.; Reichel, Jakob;
    Transporting, splitting and merging of atomic ensembles in a chip trap
    New J. Phys. 7, 3 (2005).
    http://www.iop.org/EJ/abstract/1367-2630/7/1/003

2004

  • Ristein, Jürgen;
    Charge carrier diffusion profiles in wide band gap semiconductors
    Diam. Rel. Mat. 13, 808 (2004).
  • Treutlein, Philipp; Hommelhoff, Peter; Steinmetz, Tilo; Hänsch, Theodor W.; Reichel, Jakob;
    Coherence in microchip traps
    Phys. Rev. Lett. 92, 203005 (2004).
    http://prl.aps.org/abstract/PRL/v92/i20/e203005

  • Ristein, Jürgen; Riedel, Marc; Ley, Lothar;
    Electrochemical surface transfer doping: the mechanism behind the surface conductivity of hydrogen terminated diamond
    Journal of the Electrochemical Society 151, E315 (2004).
  • Semmelroth, K.; Krieger, Michael; Pensl, Gerhard; Nagasawa, H.; Püsche, R.; Hundhausen, Martin; Ley, Lothar; Nerding, M.; Strunk, H.P.;
    Growth of 3C-SiC bulk material by the modified Lely method
    Mat. Sci. Forum 457-460, 151 (2004).
  • Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    Recovery of surface conductivity of H-terminated diamond after thermal annealing in vacuum
    Phys. Rev. B 69, 125338 (2004).
  • Ristein, Jürgen;
    Structural and electronic properties of diamond surfaces
    Thin Film Diamond (part II) , 37-96 Amsterdam (2004).
  • Püsche, R.; Hundhausen, Martin; Ley, Lothar; Semmelroth, K.; Schmid, F.; Pensl, Gerhard; Nagasawa, H.;
    Study of the temperature induced polytype conversion in cubic CVD SiC by Raman spectroscopy
    Mat. Sci. Forum 457-460, 617 (2004).
  • Strobel, Paul; Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    Surface transfer doping of diamond
    Nature 430, 439 (2004).
  • Püsche, R.; Hundhausen, Martin; Ley, Lothar; Semmelroth, K.; Schmid, F.; Pensl, Gerhard; Nagasawa, H.;
    Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy
    J. Appl. Phys. 96, 5569 (2004).
  • Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    The Impact of Ozone on the Surface Conductivity of Single Crystal Diamond
    Diam. Rel. Mat. 13, 746 (2004).

2003

2002

  • Ley, Lothar; Ristein, Jürgen;
    Comment on "Effect of average grain size on the work function of diamond films
    Appl. Phys. Lett. 81, 183 (2002).
  • B. Herzog; S. Rohmfeld; Püsche, Roland; Hundhausen, Martin; Ley, Lothar; Semmelroth, Kurt; Pensl, Gerhard;
    Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy
    Material Science Forum 389-393, 625 (2002).
  • Walter, Sebastian; Bernhardt, Jens; Starke, Ulrich; Heinz, Klaus; Ristein, Jürgen; Ley, Lothar;
    Geometry of the (2x1) reconstruction of diamond (111)
    J. Phys.: Condensed Matter 14, 3085 (2002).
  • Stammler, Martin; Eisenbeiß, H.; Ristein, Jürgen; Neubauer, Jürgen; Göbbels, Matthias; Ley, Lothar;
    Growth of high-quality homoepitaxial diamond films by HF-CVD
    Diam. Rel. Mat. 11, 504 (2002).
  • S. Rohmfeld; Hundhausen, Martin; Ley, Lothar; C. A. Zorman; M. Mehregany;
    Quantitative evaluation of biaxial strain in epitaxial 3 C- SiC layers on Si(100) substrates by Raman spectroscopy
    Journal of Applied Physics 91, 1113 (2002).
  • Treutlein, Philipp; Hommelhoff, Peter; Long, Romain; Rom, Tim; Steinmetz, Tilo; Hänsch, Theodor W.;
    Speedy BEC in a tiny trap: coherent matter waves on a microchip
    Proceedings of the XV International Conference on Laser Spectroscopy , 289 Singapore (2002).
  • Ristein, Jürgen; Riedel, Marc; Stammler, Martin; Mantel, Berthold F.; Ley, Lothar;
    Surface conductivity of nitrogen-doped diamond
    Diam. Rel. Mat. 11, 359 (2002).
  • N. Sieber; Stark, Tanja; Seyller, Thomas; Ley, Lothar; C.A. Zorman; M. Mehregany;
    The origin of the split Si-H stretch mode on hydrogenated 6H-SiC(0001): Titration of crystal truncation
    Applied Physics Letters 80, 4726 (2002).

2001

  • Reichel, Jakob; Hänsel, Wolfgang; Hommelhoff, Peter; Hänsch, Theodor W.;
    Applications of integrated magnetic microtraps
    Appl. Phys. B 72, 81-89 (2001).
    http://www.springerlink.com/content/y86xd6kjxf12wujw/?p=a591636657bf4c0789fda3a4996efaf3&pi=10

  • Hänsel, Wolfgang; Hommelhoff, Peter; Hänsch, Theodor W.; Reichel, Jakob;
    Bose–Einstein condensation on a microelectronic chip
    Nature 413, 498-501 (2001).
    http://www.nature.com/nature/journal/v413/n6855/abs/413498a0.html

  • Ristein, Jürgen; Maier, Florian; Riedel, Marc; Stammler, Markus; Ley, Lothar;
    Diamond surface conductivity experiments and photoelectron spectroscopy
    Diam. Rel. Mat. 10, 416 (2001).
  • Maier, Florian; Ristein, Jürgen; Ley, Lothar;
    Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces
    Physical Review B 64, 165411 (2001).
  • N. Sieber; B. Mantel; Seyller, Thomas; Ristein, Jürgen; Ley, Lothar; T. Heller; D. R. Batchelor; D. Schmeisser;
    Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination
    Applied Physics Letters 78, 1216 (2001).
  • Ristein, Jürgen;
    Electron affinities of diamond surfaces
    Growth, Properties and Application of Diamond , 73 London (2001).
  • Sieber, N.; Mantel, Berthold, F.; Seyller, Thomas; Ristein, Jürgen; Ley, Lothar;
    Hydrogenation of 6H-SiC as a Surface Passivation Stable in Air
    Diam. Rel. Mat. 10, 1291 (2001).
  • S. Rohmfeld; Hundhausen, Martin; Ley, Lothar; N. Schulze; Pensl, Gerhard;
    Isotope-disorder-induced line broadening of phonons in the Raman spectra of SiC
    Physical Review Letters 86, 826 (2001).
  • Hänsel, Wolfgang; Reichel, Jakob; Hommelhoff, Peter; Hänsch, Theodor W.;
    Magnetic Conveyor Belt for Transporting and Merging Trapped Atom Clouds
    Phys. Rev. Lett. 86, 608-611 (2001).
  • N. Sieber; Seyller, Thomas; Graupner, Ralf; Ley, Lothar; R. Mikalo; P. Hoffmann; D. R. Batchelor; D. Schmeisser;
    PES and LEED Study of Hydrogen and Oxygen terminated 6H-SiC(0001) and (000-1) Surfaces
    Applied Surface Science 184, 280 (2001).
  • Sieber, N.; Seyller, Thomas; Mantel, Berthold F.; Ristein, Jürgen; Ley, Lothar;
    Preparation and characterization of hydrogen terminated 6H-SiC
    Mat. Sci. Forum 353-356, 223 (2001).
  • Maier, Frederic; Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    Spectroscopic Investigations of Diamond/Hydrogen/Metal and Diamond/Metal Interfaces
    Diam. Rel. Mat. 10, 506 (2001).
  • Ristein, Jürgen; Riedel, Marc; Maier, Frederic; Mantel, Berthold F.; Stammler, Martin; Ley, Lothar;
    Surface Conductivity of Diamond as a Function of Nitrogen Doping
    phys. Stat. sol. (a) 186, 249 (2001).
  • Ristein, Jürgen; Riedel, Marc; Maier, Frederic; Mantel, Berthold F.; Stammler, Martin; Ley, Lothar;
    Surface doping: a special feature of diamond
    J Phys.: Condens. Matter 13, 8979 (2001).
  • Mantel, Berthold; Stammler, Markus; Ristein, Jürgen; Ley, Lothar;
    The correlation between surface conductivity and adsorbate coverage on diamond as studied by infrared spectroscopy
    Diamond and Related Materials 10, 429 (2001).
  • Stark, Tanja; L. Gutowski; M. Herden; H. Grunleitner; S. Kohler; Hundhausen, Martin; Ley, Lothar;
    Ti-Silicide Formation During Isochronal Annealing Followed by in situ Ellipsometry
    Microelectronic Engineering 55, 101 (2001).
  • Hänsel, Wolfgang; Reichel, Jakob; Hommelhoff, Peter; Hänsch, Theodor W.;
    Trapped-atom interferometer in a magnetic microtrap
    Phys. Rev. A 64, 063607 (2001).
    http://prola.aps.org/abstract/PRA/v64/i6/e063607

2000

  • Ley, Lothar; Ristein, Jürgen; Graupner, Ralf;
    Comment on ‘quantum confinement effect in diamond nanocrystals studied by x-ray-absorption spectroscopy’
    Phys. Rev. Lett. 84, 5679 (2000).
  • Stark, Tanja; H. Grünleitner; Hundhausen, Martin; Ley, Lothar;
    Deriving the Kinetic Parameters for Pt-Silicide Formation from Temperature Ramped in Situ Ellipsometric Measurements
    Thin Solid Films 358, 73 (2000).
  • Püsche, Roland; S. Rohmfeld; Hundhausen, Martin; Ley, Lothar;
    Disappearance of the LO-Phonon line in the Raman spectrum of 6H-SiC
    Material Science Forum 338-342, 583 (2000).
  • Ristein, Jürgen;
    Electronic properties of diamond surfaces - blessing or curse for devices?
    Diamond and Related Materials 9, 1129 (2000).
  • Cui, Jingbiao; Ristein, Jürgen; Stammler, Martin; Janischowsky, Klemens; Kleber, G.; Ley, Lothar;
    Hydrogen termination and electron emission from CVD diamond surfaces: a combined SEM, PEEM, photoelectron yield, and field emission study
    Diam. Rel. Mat. 9, 1143 (2000).
  • Sieber, Norbert; Hollering, Markus; Ristein, Jürgen; Ley, Lothar; J. Riley; R. Leckey;
    Photoemission study of the silicate adlayer reconstruction on 6H-SiC(0001)
    Material Science Forum 338-342, 391 (2000).
  • Ristein, Jürgen; Maier, Florian; Riedel, Marc; Cui, Jingbiao; Ley, Lothar;
    Surface electronic properties of diamond
    Phys. Stat. Sol. 181, 65 (2000).
  • Maier, Florian; Riedel, Marc; Mantel, B. ; Ristein, Jürgen; Ley, Lothar;
    The origin of surface conductivity in diamond
    Physical Review Letters 85, 3472 (2000).
  • Cui, Jingbiao; Stammler, Martin; Ristein, Jürgen; Ley, Lothar;
    The role of hydrogen for field emission from chemical vapour deposited diamond and nanocrystaline diamond powder
    J. Appl. Phys. 88, 3667 (2000).
  • Ristein, Jürgen; Cui, Jingbiao; Graupner, Ralf; Maier, Frederic; Riedel, Marc; Mantel, Berthold F.; Stammler, Markus; Ley, Lothar;
    The role of adsorbates and defects on diamond surfaces
    New Diamond and Frontier Carbon Technology 10, 363 (2000).

1999

  • Cui, Jingbiao; Ristein, Jürgen; Ley, Lothar;
    Dehydrogenation and the surface phase transition on diamond (111): kinetics and electronic structure
    Phys. Rev. B 59, 5847 (1999).
  • Hollering, Markus; Maier, Florian; Sieber, Norbert; Stammler, Markus; Ristein, Jürgen; Ley, Lothar; A. Stampfl; J. Riley; R. Leckey;
    Electronic states of an ordered oxide on C-terminated 6H-SiC
    Surface Science 442, 531 (1999).
  • Cui, Jingbiao; Graupner, Ralf; Ristein, Jürgen; Ley, Lothar;
    Electron affinity and band bending of the single crystal diamond (111) surface
    Diam. Rel. Mat. 8, 792 (1999).
  • Ley, Lothar; Graupner, Ralf; Cui, Jingbiao; Ristein, Jürgen;
    Electronic properties of single crystalline diamond surfaces
    Carbon 37, 793 (1999).
  • Stammler, Martin; Ristein, Jürgen; Habermann, T.; Janischowsky, Klemens; Nau, D.; Müller, Gerhard; Ley, Lothar;
    Field emission measurements with micrometre resolution on carbon nanostructures
    Diam. Rel. Mat. 8, 792 (1999).
  • Ley, Lothar; Mantel, Berthold, F.; Matura, K.; Stammler, Markus; Janischowsky, Klemens; Ristein, Jürgen;
    Infrared spectroscopy of C-D vibrational modes on diamond (100) surfaces
    Surf. Sci. 427-428, 245 (1999).
  • Zhou, Shi-Ming; Hundhausen, Martin; Stark, Tanja; Chen, L.Y.; Ley, Lothar;
    Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry
    J. Vac. Sci. Technol. A 17, 144 (1999).
  • Cui, Jingbiao; Ristein, Jürgen; Ley, Lothar;
    Low threshold electron emission from diamond
    Rev. B 60, 16135 (1999).
  • Ley, Lothar; Stark, Tanja; Hundhausen, Martin; Gruenleitner, Holger;
    Modeling the evolution of ellipsometric data during the thermally induced Pt-silicide formation: activation energies and prefactors
    Symposium. Materials Research Society , 145 San Francisco, (1999).
  • Graupner, Ralf; Ristein, Jürgen; Ley, Lothar; Jung, Ch.;
    Surface sensitive K-edge absorption spectroscopy of clean and hydrogen terminated diamond (111) and (100) surfaces
    Phys. Rev. B 60, 17023 (1999).
  • Maier, Frederic; Graupner, Ralf; Hollering, Markus; Hammer, Lutz; Ristein, Jürgen; Ley, Lothar;
    The hydrogenated and bare diamond (110) surface: a combined LEED-, XPS-, and ARPES study
    Surf. Sci. 443, 177 (1999).

1998

  • Ristein, Jürgen; Stief, R.T.; Beyer, Wolfgang Fritz; Ley, Lothar;
    A comparative analysis of a C:H by IR-spectroscopy and mass selected thermal effusion
    J. Appl. Phys. 84, 3836 (1998).
  • Schäfer, J; Ristein, Jürgen; Miyazaki, Seiichi; Ley, Lothar;
    Formation of the interface between c-Si(111) and diamond-like carbon studied with photoelectron spectroscopy
    Appl. Surf. Sci. 123/124, 11 (1998).
  • Graupner, Ralf; Maier, Florian; Ristein, Jürgen; Ley, Lothar;
    High resolution surface sensitive C1s core level spectra of clean and hydrogen terminated diamond (100) and (111) surfaces
    Phys. Rev. B 57, 12397 (1998).
  • Sieber, N.; Ristein, Jürgen; Ley, Lothar;
    Mechanism of reaktive Ion etching of 6H-SiC in CHF3/O2 gas mixtures
    Mat. Sci. Forum 264-268, 825 (1998).
  • Cui, Jingbiao; Amtmann, K.; Ristein, Jürgen; Ley, Lothar;
    Non contact temperature measurements of diamond by Raman spectroscopy
    J. Appl. Phys. 83, 7929 (1998).
  • Ristein, Jürgen; Stein, W.; Ley, Lothar;
    Photoelectron yield spectroscopy on negative electron affinity diamond surfaces: a contactless unipolar transport experiment
    Diam. and Rel. Mat. 7, 626 (1998).
  • S. Rohmfeld; Hundhausen, Martin; Ley, Lothar;
    Raman scttering in polycrystalline 3C-SiC: influence of stacking faults
    Physical Review B 58, 9858 (1998).
  • Cui, Jingbiao; Ristein, Jürgen; Ley, Lothar;
    The electron affinity of the bare and hydrogen covered single crystal diamond (111) surface
    Phys. Rev. Lett. 81, 429 (1998).
  • Ristein, Jürgen; Schäfer, J.; Ley, Lothar;
    Valence band and gap state spectroscopy of amorphous carbon by photoelectron emission techniques
    Amorphous Carbon:State of the Art , 163-185 Singapore Singapore, (1998).

1997

  • Poczik, I.; Koos, M.; Moustafa, S.M.; Andar, J.A.; Berkesi, O.; Hundhausen, Martin;
    Comparative Raman studies of amorphous carbon films using infra red and visible excitation
    Mikrochim. Acta 14, 755 (1997).
  • Ristein, Jürgen; Stein, W.; Ley, Lothar;
    Defect Spectroscopy and Determination of the Electron Diffusion Length in Single Crystal Diamond by Total Photoelectron Yield Spectroscopy
    Phys. Rev. Lett. 78, 1803 (1997).
  • Graupner, Ralf; Hollering, Markus; Ziegler, Anja; Ristein, Jürgen; Ley, Lothar; Stampfl, A.;
    Dispersion of surface states on diamond (100) and (111)
    Phys. Rev. B 55, 10841 (1997).
  • Ristein, Jürgen; Graupner, Ralf;
    Electronic properties of diamond surfaces
    Festkörperprobleme/Advances in Solid State Physics 36, 77 Braunschweig/Wiesbaden (1997).
  • Schäfer, J; Ristein, Jürgen; Ley, Lothar;
    Electronic and structural properties of the interface between c-Si (111) and diamond like carbon
    Diam. and Rel. Mat. 6, 730 (1997).
  • Miyazaki, Seiichi; Schäfer, J.; Ristein, Jürgen; Ley, Lothar;
    Implication of hydrogen-induced boron passivation in wet-chemically cleaned Si(111):H
    Appl. Surf. Sci. 117/118, 32 (1997).
  • Schäfer, J; Ristein, Jürgen; Miyazaki, Seiichi; Ley, Lothar;
    Interface formation between hydrogen terminated Si (111) and amorphous hydrogenated carbon (a-C:H)
    J. Vac. Sci. & Technol. A 15, 408 (1997).
  • Miyazaki, Seiichi; Nishimura, H.; Fukuda, M; Ley, Lothar; Ristein, Jürgen;
    Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces
    Appl. Surf. Sci. 117/118, 32 (1997).

1996

  • Leihkamm, K.; Wolf, Markus; Ristein, Jürgen; Ley, Lothar;
    Changes of the occupied density of defect states of a-Si:H upon illumination
    Phys. Rev. B 53, 4522 (1996).
  • Stöckel, R.; Janischowsky, Klemens; Rohmfeld, Stefan; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Diamond growth during the bias pretreatment in microwave CVD of diamond
    Diam. and Rel. Mat. 5, 321 (1996).
  • Stöckel, R.; Janischowsky, Klemens; Rohmfeld, Stefan; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Growth of diamond on silicon during the bias pretreatment in chemically vapour deposition of polycristalline diamond films
    J. Appl. Phys. 76, 768 (1996).
  • Hundhausen, Martin; Nagy, A.; Ley, Lothar;
    High field transport in the inversion layer of amorphous silicon thin film transistors
    J. Non-Cryst. Sol. 198-200, 230 (1996).
  • Stief, R.; Schäfer, J.; Ristein, Jürgen; Ley, Lothar; Beyer, Wolfgang Fritz;
    Hydrogen bonding analysis in amorphous hydrogenated carbon by a combination of infrared absorption and thermal effusion experiments
    J. Non-Cryst. Sol. 198-200, 643 (1996).
  • Hundhausen, Martin; Ley, Lothar; Witt, C.;
    Influence of space charges on the resonant photoconductor employing a moving laser inducde grating
    Appl. Phys. Lett. 69, 1746 (1996).
  • Ley, Lothar; Teuschler, Ralf; Mahr, K.; Miyazaki, Seiichi; Hundhausen, Martin;
    Kinetics of field induced oxidation of hydrogen terminated Si(111) by means of a scanning force micoscope
    J. Vac. Sci. Technol. B 14, 2845 (1996).
  • Teuschler, Thomas; Mahr, K.; Miyazaki, Seiichi; Hundhausen, Martin; Ley, Lothar;
    Nanometer-scale modification of the tribological properties of Si(111):H surfaces performed and investigated by a conducting-probe scanning force microscope
    J. Vac. Sci. Technol. B 14, 1268 (1996).
  • Ley, Lothar; Ristein, Jürgen; Schäfer, J.; Miyazaki, Seiichi;
    New-surface dopant passivation after wet-chemical preparation of Si (111):H surfaces
    J. Vac. Sci. & Technol. B 14, 3008 (1996).
  • Schäfer, J; Ristein, Jürgen; Graupner, Ralf; Ley, Lothar; Stephan, U.; Frauenheim, Thomas; Veerasamy, V.S.; Amaratunga, Gehan A. J.; Weiler, M.; Erhardt, H.;
    Photoemission study of amorphous carbon modifications and comparison with calculated densities of states
    Phys. Rev. B 53, 7762 (1996).
  • Hundhausen, Martin; Ley, Lothar; Witt, C.;
    Resonant photoconductor structures for the generation of microwave currents: Importance of space charges
    proc. 23rd Int. Conf. on the Physics of Semiconductors , 3319 Berlin Berlin, (1996).
  • Strauß, Johannes; Hundhausen, Martin; Ley, Lothar;
    Sensitive measurement of laser induced photocarrier gratings in semiconductors by optical heterodyne detection
    proc. 23rd Int. Conf. on the Physics of Semiconductors , 3223 Berlin Berlin, (1996).
  • Miyazaki, Seiichi; Schäfer, J.; Ristein, Jürgen; Ley, Lothar;
    Surface Fermi level position of hydrogen passivated Si (111) surfaces
    Appl. Phys. Lett. 68, 1247 (1996).
  • Graupner, Ralf; Ristein, Jürgen; Ziegler, Anja; Hollering, Markus; Ley, Lothar;
    Surface state dispersions on diamond (100) and (111) surfaces
    the Physics of Semiconductors 2, 843 Singapore (1996).
  • Schäfer, J; Ristein, Jürgen; Ley, Lothar; Stephan, U.; Frauenheim, Thomas;
    The density of states of ta-C, ta-C:H and a-C:H as determined by x-ray excited photoelectron spectroscopy and molecular dynamics calculation
    J. Non-Cryst. Sol. 198-200, 641 (1996).
  • Hundhausen, Martin;
    The moving photocarrier grating technique for the determination of transport parameters in thin film semiconductors
    J. Non-Cryst. Sol. 198-200, 146 (1996).

1995

  • Haken, U.; Hundhausen, Martin; Ley, Lothar;
    Analysis of the moving-photocarrier-grating technique for the determination of the mobility and lifetime of photocarriers in semiconductors
    Phys. Rev. B 51, 10579 (1995).
  • Ristein, Jürgen;
    Analytical calculation on the surface potential and the band profile within the i-region of a semi-infinite p/i semiconductor junction with arbitrary thickness and surface charge coverage of the intrinsic top layer
    J. Appl. Phys. 78, 6083 (1995).
  • Hundhausen, Martin; Ley, Lothar;
    Bipolar treatment of the electrically detected transient grating technique
    Appl. Phys. Lett. 67, 2518 (1995).
  • Stöckel, R.; Janischowsky, Klemens; Rohmfeld, Stefan; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Diamond growth during the bias pretreatment in microwave CVD of diamond
    Diam. Rel. Mat. 5, 321 (1995).
  • Ristein, Jürgen; Schäfer, J.; Ley, Lothar;
    Effektive correlation energies for defects in a-C:H from a comparison of photoelectron yield and electron spin resonance experiments
    Diamond and Related Materials 4, 508 (1995).
  • Weigelt, G.; Hundhausen, Martin; Ley, Lothar;
    Is persistent photoconductivity in nipi-structures of amorphous silicon due to the Staebler Wronski e
    Solid State Phenomena 44-46, 495 (1995).
  • Teuschler, Thomas; Mahrt-Hülbig, Karin; Miyazaki, Seiichi; Hundhausen, Martin; Ley, Lothar;
    Nanometer-scale modification of the tribological properties of Si(100) by scanning force microscopy
    Appl. Phys. Lett. 66, 2499 (1995).
  • Teuschler, Thomas; Mahrt-Hülbig, Karin; Miyazaki, Seiichi; Hundhausen, Martin; Ley, Lothar;
    Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics
    Appl. Phys. Lett. 67, 3144 (1995).
  • Nagy, A.; Hundhausen, Martin; Ley, Lothar; Brunst, G.; Holzenkämpfer, E.;
    Steady-state hopping conduction in the conduction band tail of a-Si:H studied in thin
    Phys. Rev. B 52, 11289 (1995).
  • Ristein, Jürgen; Appelt, C; Gertkemper, T.; Ley, Lothar;
    The influence of chemical annealing on the electronic properties of amorphous silicon
    Solid State Phenomena 44-46, 775-790 Switzerland (1995).

1994

  • Teuschler, Thomas; Hundhausen, Martin; Eckstein, Ralf; Ley, Lothar;
    Cross-Sectional Scanning Tunneling and Scanning Force Microscopy of Amorphous Hydrogenated Silicon pn-Doping-Superlattices in Nitrogen and Air
    J. Vac. Sci. Technol. B 12, 2440 (1994).
  • Teuschler, Thomas; Hundhausen, Martin; Ley, Lothar;
    Cross-sectional scanning-tunneling-spectroscopy of a-Si:H pn-doping superlattices
    Superlattices and Microstructures 16, 271 (1994).
  • Witt, C.; Haken, U.; Hundhausen, Martin;
    Determination of the Photocarrier Lifetime in Amorphous Silicon with the Moving Photocarrier Grating Technique
    Jap. J. Appl. Phys. 33, L1809 (1994).
  • Teuschler, Thomas; Hundhausen, Martin; Ley, Lothar;
    Influence of light on individual defect noise in a-Si:H/a-SiNx:H double barrier structures
    J. Appl. Phys. 75, 2690 (1994).
  • Hundhausen, Martin; Haken, U.; Ley, Lothar;
    Moving Photocarrier Grating Technique for Mobility and Lifetime Measurements in Amorphous Semiconductors
    Mat. Res. Soc. Symp. Proc. 336, 353 (1994).
  • Graupner, Ralf; Ristein, Jürgen; Ley, Lothar;
    Photoelectron spectroscopy of clean and hydrogen exposed diamond (111) surfaces
    Surface Science 320, 201 (1994).
  • Ristein, Jürgen;
    Sum rule for quadrature response frequency resolved photoluminescence spectra
    Phil. Mag. B 70, 963 (1994).
  • Graupner, Ralf; Stöckel, R.; Janischowsky, Klemens; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    The influence of surface treatment on the electronic structure of CVD diamond films
    Diamond and Related Materials 3, 891 (1994).
  • Graupner, Ralf; Stöckel, R.; Janischowsky, Klemens; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    The influence of surface treatment on the electronic structure of CVD diamond films
    Diam. Rel. Mat. 3, 891 (1994).

1993

  • Teuschler, Thomas; Hundhausen, Martin; Ley, Lothar; Arce, R.;
    Analysis of Random telegraph noise in large-area amorphous double-barrier structures
    Phys. Rev. B 47, 12687 (1993).
  • Haken, U.; Hundhausen, Martin; Ley, Lothar;
    Carrier Mobility and Lifetime in a-Si:H determined by the Moving Grating Technique
    J. of Non Cryst. Solids 164-166, 497 (1993).
  • Plass, M.F.; Ristein, Jürgen; Ley, Lothar;
    Electronic and structural properties of the a-Si:H/a-SiNx:H interface
    J. Non-Cryst. Solids 164-166, 195 (1993).
  • Schäfer, J; Ristein, Jürgen; Ley, Lothar;
    Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy
    J. Non-Cryst. Solids 164-166, 1123 (1993).
  • Nagy, A.; Hundhausen, Martin; Ley, Lothar; Brunst, G.; Holzenkämpfer, E.;
    Field enhanced conductivity in a-Si:H thin film transistors
    J. Non-Cryst. Solids 164-166, 529 (1993).
  • Schäfer, J; Ristein, Jürgen; Ley, Lothar; Ibach, Harald;
    High Sensitivity photoelectron yield spectroscopy with computer-calculated electron optics
    Rev. Sci. Instrum. 64, 653 (1993).
  • Xu, S.; Hundhausen, Martin; Ristein, Jürgen; Yan. B.; Ley, Lothar;
    Influence of substrate bias on the properties of a-C:H films prepared by plasma CVD
    J. Non-Cryst. Solids 164-166, 1127 (1993).
  • Stöckel, R.; Graupner, Ralf; Janischowsky, Klemens; Xu, S.; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Initial stages in the growth of polycrystalline diamond on silicon
    Diamonds and Related Materials 2, 1467 (1993).
  • Gertkemper, Th.; Ristein, Jürgen; Ley, Lothar;
    In-situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy
    J. Non-Cryst. Solids 164-166, 123 (1993).
  • Graf, Walther; Wolf, Markus; Leihkamm, K.; Ristein, Jürgen; Ley, Lothar;
    Light-induced transient changes of the occupied density of defect states of a-Si:H
    J. Non-Cryst. Solids 164-166, 195 (1993).
  • Haken, U.; Hundhausen, Martin; Ley, Lothar;
    Moving Grating Technique: A New Method for the Determination of Electron and Hole Mobilities and their Lifetime
    Appl. Phys. Lett. 63, 3066 (1993).
  • Graf, Walther; Leihkamm, K.; Ristein, Jürgen; Ley, Lothar;
    Signature of the weak bond-dangling bond conversion process in a-Si:H as seen by total photoelectron yield spectroscopy
    MRS Proceedings 297, 207 Pitsburg, (1993).

1991

  • Teuschler, Thomas; Hundhausen, Martin; Ley, Lothar; Viczian, C.;
    Individual electronic defect states in a-Si:H/a-SiNx double barrier structures
    J. of Non Cryst. Solids 137&138, 1107 (1991).
  • Hautala, J.; Taylor, P.C.; Ristein, Jürgen;
    Interface states in a-Si:H as probed by optically induced ESR
    AIP Conference Proceedings 234, 170 Stafford, Denver, (1991).
  • Santos, P.; Hundhausen, Martin; Ley, Lothar; Viczian, C.;
    Structure of interfaces in a-Si:H/a-SiNx:H superlattices
    J. Appl. Phys. 69, 778 (1991).
  • Hundhausen, Martin; Ley, Lothar;
    The formation and stability of sub-micron clusters in silane and argon plasmas
    J. of Non Cryst. Solids 137&138, 795 (1991).
  • Ristein, Jürgen;
    Unification of geminate and distant pair recombination statistics: low temperature photoelectronic properties in a-Si:H
    J. Non-Cryst. Solids 137&138, 563 (1991).

1990

  • Ristein, Jürgen; Taylor, P.C.; Ohlsen, W.D.; Weiser, Gerhard;
    Radiative recombination center in As2Se3 as studied by optically detected magnetic resonance
    Phys. Rev. B 42, 11845 (1990).

1989

  • Ristein, Jürgen; Hautala, J.; Taylor, P.C.;
    Defect spectroscopy in a-Si:H using infrared excited luminescence and electron spin resonance
    J. Non-Cryst. Solids 114, 444 (1989).
  • Ristein, Jürgen; Hooper, Brett; Gu, S.; Taylor, P.C.;
    Excitation spectroscopy of photoluminescence in a-Si:H
    Phys. Rev. B 27, 403 (1989).
  • Ristein, Jürgen; Hautala, J.; Taylor, P.C.;
    Excitation-energy dependence of optically induced ESRin a-Si:H
    Phys. Rev. B 40, 88 (1989).
  • Ristein, Jürgen; Taylor, P.C.; Ohlsen, W.D.; Weiser, Gerhard;
    Optically detected magnetic resonance of the intrinsic luminescence in As2Se3
    J. Non-Cryst. Solids 114, 91 (1989).
  • Arce, R.; Ley, Lothar; Hundhausen, Martin;
    Random telegraphic noise in large area a-Si:H/a:Si1􀀀xNx double barrier structures
    J. of Non Cryst. Solids 114, 471 (1989).
  • Hundhausen, Martin;
    Thermally stimulated Conductivity in a-Si:H Doping superlattices
    J. of Non Cryst. Solids 114, 720 (1989).

1988

  • Hundhausen, Martin; Ichiguchi, T.; Shiraki, Y.;
    Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface
    Appl. Phys. Lett. 53, 110 (1988).
  • Ristein, Jürgen; Weiser, Gerhard;
    Microscopic structure of the radiative centre in As2Se3 crystals
    Sol. State Commun. 66, 361 (1988).
  • Ristein, Jürgen; Finger, F.; Fuchs, W.; Liedtke, S.;
    Optically detected magnetic resonance (OMDR) in a-Si1-xGex:H-alloys
    Sol. State Commun. 67, 211 (1988).

1987

  • Ley, Lothar; Hundhausen, Martin;
    Carrier recombination kinetics in amorphous doping superlattices
    Disordered semiconductors , n/a New York & London (1987).
  • Ichiguchi, T.; Hundhausen, Martin; Shiraki, Y.;
    Multiple quantum wires in GaAs/GaAlAs
    Extended abstracts of the 48th Autum meeting of the Jap. Soc. of Appl. Phys. n/a, n/a (1987).
  • Weiser, Gerhard; Ristein, Jürgen;
    New insight into recombination and thermalization in As2Se3
    J. Non-Cryst. Solids 97&98, 1131 (1987).
  • Ristein, Jürgen; Weiser, Gerhard;
    Thermalization of excited carriers through band states studied by photoluminescence in As2Se3 single crystals
    Phil. Mag. B 56, 51 (1987).

1986

  • Hundhausen, Martin; Santos, P.; Ley, Lothar; Habraken, F.; Beyer, Wolfgang Fritz; Primig, R.; Gorges, G.;
    Characterization of superlattices based on amorphous silicon
    J. Appl. Phys. 61, 556 (1986).
  • Ristein, Jürgen; Weiser, Gerhard;
    Quenching by electric fields of the luminescence of As2Se3 single crystals
    Sol. State Commun. 57, 639 (1986).
  • Ristein, Jürgen; Weiser, Gerhard;
    Recombination of geminate pairs in As2Se3 single crystals
    Phil. Mag. B 54, 533 (1986).

1985

  • Santos, P.; Hundhausen, Martin; Ley, Lothar;
    Experimental evidence for Phonon folding in compositional amorphous Superlattices
    J. of Non Cryst. Solids 77&78, 1069 (1985).
  • Ristein, Jürgen; Weiser, Gerhard;
    Influence of doping on the optical properties and on the covalent bonds in plasma deposited amorphous silicon
    Solar Energy Materials 12, 221 (1985).
  • Hundhausen, Martin; Ley, Lothar;
    Model for persistent photoconductivity in doping-modulated amorphous silicon superlattices
    Phys. Rev. B 32, 6655 (1985).
  • Santos, P.; Hundhausen, Martin; Ley, Lothar;
    Observation of folded-zone acoustical phonons by Raman scattering
    Phys. Rev. B 33, 1516 (1985).
  • Hundhausen, Martin; Ley, Lothar;
    Persistent Photoconductivity in Doping-modulated amorphous silicon superlattices
    J. of Non Cryst. Solids 77&78, 1051 (1985).

1984

  • Hundhausen, Martin; Ley, Lothar; Carius, R.;
    Carrier Recombination in Doping-Superlattices of a-Si:H
    Proc. 17th Int. Conf. on the Physics of Semiconductors , 495 San Francisco San Francisco, (1984).
  • Hundhausen, Martin; Ley, Lothar; Carius, R.;
    Carrier Recombination Times in Amorphous-Silicon Doping Superlattices
    Phys. Rev. Lett. 53, 1598 (1984).

1983

  • Hundhausen, Martin;
    Defect States in a-Si:Nx:H
    J. of Non Cryst. Solids 59&60, 601 (1983).