Lothar Ley

2021

• Yianni SA., Creedon DL., Schenk AK., Xing K., Akhgar G., Hoxley DI., Ley L., McCallum JC., Pakes CI.:
  Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond
  In: Diamond and Related Materials 116 (2021), Art.Nr.: 108377
  ISSN: 0925-9635
  DOI: 10.1016/j.diamond.2021.108377

2020

• Heide C., Hauck M., Higuchi T., Ristein J., Ley L., Weber HB., Hommelhoff P.:
  Attosecond-fast internal photoemission
  In: Nature Photonics 14 (2020), S. 219–222
  ISSN: 1749-4885
  DOI: 10.1038/s41566-019-0580-6
  URL: https://arxiv.org/abs/2001.02989
• Schenk AK., Sear MJ., Dontschuk N., Tsai A., Rietwyk KJ., Tadich A., Cowie BC., Ley L., Stacey A., Pakes CI.:
  Development of a silicon-diamond interface on (111) diamond
  In: Applied Physics Letters 116 (2020), Art.Nr.: 071602
  ISSN: 0003-6951
  DOI: 10.1063/1.5144093
• Xing K., Creedon DL., Yianni SA., Akhgar G., Zhang L., Ley L., McCallum JC., Qi DC., Pakes CI.:
  Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond
  In: Carbon 164 (2020), S. 244-250
  ISSN: 0008-6223
  DOI: 10.1016/j.carbon.2020.03.047
• Xing K., Tsai A., Creedon DL., Yianni SA., Mccallum JC., Ley L., Qi DC., Pakes CI.:
  Engineering the spin-orbit interaction in surface conducting diamond with a solid-state gate dielectric
  In: Applied Physics Letters 116 (2020)
  ISSN: 0003-6951
  DOI: 10.1063/5.0005690
• Xing K., Xiang Y., Jiang M., Creedon DL., Akhgar G., Yianni SA., Xiao H., Ley L., Stacey A., McCallum JC., Zhuiykov S., Pakes CI., Qi DC.:
  MoO3 induces p-type surface conductivity by surface transfer doping in diamond
  In: Applied Surface Science 509 (2020), Art.Nr.: 144890
  ISSN: 0169-4332
  DOI: 10.1016/j.apsusc.2019.144890

2019

• Akhgar G., Ley L., Creedon DL., Stacey A., Mccallum JC., Hamilton AR., Pakes C.:
  G -factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond
  In: Physical Review B 99 (2019), Art.Nr.: 035159
  ISSN: 2469-9950
  DOI: 10.1103/PhysRevB.99.035159
• Rietwyk KJ., Keller DA., Ginsburg A., Barad HN., Priel M., Majhi K., Yan Z., Tirosh S., Anderson AY., Ley L., Zaban A.:
  Universal Work Function of Metal Oxides Exposed to Air
  In: Advanced Materials Interfaces (2019), Art.Nr.: 1802058
  ISSN: 2196-7350
  DOI: 10.1002/admi.201802058

2013

• Ley L., Smets Y., Pakes CI., Ristein J.:
  Calculating the Universal Energy –Level Alignment of Organic Molecules on Metal Oxides
  In: Advanced Functional Materials 23 (2013), S. 794
  ISSN: 1616-301X
  DOI: 10.1002/adfm.201201412
• O'Donnell KM., Edmonds MT., Ristein J., Tadich A., Thomsen L., Wu QH., Pakes CI., Ley L.:
  Diamond surfaces with air-stable negative electron affinity and giant electron yield enhancement
  In: Advanced Functional Materials 23 (2013), S. 5608-5614
  ISSN: 1616-301X
  DOI: 10.1002/adfm.201301424
• Rietwyk KJ., Smets Y., Bashouti M., Christiansen SH., Schenk A., Tadich A., Edmonds MT., Ristein J., Ley L., Pakes CI.:
  Charge transfer doping of Silicon
  In: Physical Review Letters n/a (2013), S. n/a
  ISSN: 0031-9007
  DOI: 10.1103/PhysRevLett.112.155502

2012

• Ley L., Ristein J.:
  Diamond Surfaces
  In: Surface and Interface Science, Weinheim, Germany: Wiley-VCH, 2012, S. 889-940

2011

• Edmonds MT., Pakes CI., Mammadov S., Zhang W., Tadich A., Ristein J., Ley L.:
  Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond
  In: Applied Physics Letters 88 (2011), S. 102101
  ISSN: 0003-6951
  DOI: 10.1063/1.3561760

2010

• Ristein J., Zhang W., Speck F., Ostler M., Ley L., Seyller T.:
  Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide
  In: Journal of Physics D-Applied Physics 43 (2010), S. 345303
  ISSN: 0022-3727
  DOI: 10.1088/0022-3727/43/34/345303
• Speck F., Ostler M., Röhrl J., Emtsev K., Hundhausen M., Ley L., Seyller T.:
  Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM
  In: Physica Status Solidi (C) Current Topics in Solid State Physics 7 (2010), S. 398
  ISSN: 1862-6351
  DOI: 10.1002/pssc.200982496
• Speck F., Ostler M., Röhrl J., Jobst J., Waldmann D., Hundhausen M., Ley L., Weber HB., Seyller T.:
  Quasi-freestanding Graphene on SiC(0001)
  In: Materials Science Forum 645-648 (2010), S. 629-632
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.645-648.629
• Strobel P., Ristein J., Ley L.:
  Ozone-Mediated Polymerization of Fullerene and Fluorofullerene Thin Films
  In: Journal of Physical Chemistry C 114 (2010), S. 4317
  ISSN: 1932-7447
  DOI: 10.1021/jp9105635
• Weingart S., Bock C., Kunze U., Emtsev K., Seyller T., Ley L.:
  Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties
  In: Physica E-Low-Dimensional Systems & Nanostructures 42 (2010), S. 687-690
  ISSN: 1386-9477
  DOI: 10.1016/j.physe.2009.11.006

2009

• Emtsev K., Bostwick A., Horn K., Jobst J., Kellogg GL., Ley L., McChesney J., Ohta T., Reshanov S., Röhrl J., Rotenberg E., Schmid A., Waldmann D., Weber HB., Seyller T.:
  Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
  In: Nature Materials 8 (2009), S. 203-207
  ISSN: 1476-1122
  DOI: 10.1038/NMAT2382
• Weingart S., Bock C., Kunze U., Speck F., Seyller T., Ley L.:
  Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions
  In: Applied Physics Letters 95 (2009), Art.Nr.: 262101
  ISSN: 0003-6951
  DOI: 10.1063/1.3276560

2008

• Hundhausen M., Püsche R., Röhrl J., Ley L.:
  Characterization of defects in silicon carbide by Raman spectroscopy
  In: physica status solidi (b) 254 (2008), S. 1356
  ISSN: 0370-1972
  DOI: 10.1002/pssb.200844052
• Lauffer P., Emtsev K., Graupner R., Ley L., Seyller T., Reshanov S., Weber HB.:
  Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy
  In: Physical Review B 77 (2008), S. 155426
  ISSN: 1098-0121
  DOI: 10.1103/PhysRevB.77.155426
• Lauffer P., Emtsev K., Graupner R., Seyller T., Ley L.:
  Molecular and electronic structure of PTCDA on bilayer graphene on SiC(0001) studied with scanning tunneling microscopy
  In: physica status solidi (b) 245 (2008), S. 2064-2067
  ISSN: 0370-1972
  DOI: 10.1002/pssb.200879615
• Mares JJ., Hubik P., Kristofik J., Ristein J., Strobel P., Ley L.:
  Influence of ambient humidity on the surface conductivity of hydrogenated diamond
  In: Diamond and Related Materials 17 (2008), S. 1356
  ISSN: 0925-9635
  DOI: 10.1016/j.diamond.2008.01.063
• Ristein J., Zhang W., Ley L.:
  Hydrogen-terminated diamond electrodes: I. Charges, potentials, energies
  In: Physical Review E 78 (2008), S. 041602
  ISSN: 1539-3755
  DOI: 10.1103/PhysRevE.78.041602
• Röhrl J., Hundhausen M., Emtsev K., Seyller T., Graupner R., Ley L.:
  Raman spectra of epitaxial graphene on SiC(0001)
  In: Applied Physics Letters 92 (2008), S. 201918
  ISSN: 0003-6951
  DOI: 10.1063/1.2929746
• Röhrl J., Hundhausen M., Emtsev K., Seyller T., Ley L.:
  Graphene layers on silicon carbide studied by Raman spectroscopy
  In: Materials Science Forum 600-603 (2008), S. 567
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.600-603.567
• Zhang W., Ristein J., Ley L.:
  Hydrogen-terminated diamond electrodes: II. Redox activity
  In: Physical Review E 78 (2008), S. 041603
  ISSN: 1539-3755
  DOI: 10.1103/PhysRevE.78.041603

2007

• Lauffer P., Graupner R., Jung A., Hirsch A., Ley L.:
  Ordered arrangement of 9-aminoanthracene on Au(1 1 1) surfaces: A scanning tunneling microscopy study
  In: Surface Science 601 (2007), S. 5533-5539
  ISSN: 0039-6028
  DOI: 10.1016/j.susc.2007.09.023
• Semmelroth K., Krieger M., Pensl G., Nagasawa H., Püsche R., Hundhausen M., Ley L., Nerding M., Strunk HP.:
  Growth of cubic SiC single crystals by the physical vapor transport technique
  In: Journal of Crystal Growth 308 (2007), S. 241-246
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2007.07.060

2006

• Graupner R., Abraham J., Wunderlich D., Vencelová A., Lauffer P., Röhrl J., Hundhausen M., Ley L., Hirsch A.:
  Nucleophilic-alkylation-reoxidation: A functionalization sequence for single-wall carbon nanotubes
  In: Journal of the American Chemical Society 128 (2006), S. 6683-6689
  ISSN: 0002-7863
  DOI: 10.1021/ja0607281
• Jung A., Graupner R., Ley L., Hirsch A.:
  Quantitative determination of oxidative defects on single walled carbon nanotubes
  In: physica status solidi (b) 243 (2006), S. 3217-3220
  ISSN: 0370-1972
  DOI: 10.1002/pssb.200669128
• Lauffer P., Jung A., Graupner R., Hirsch A., Ley L.:
  Functionalization of single-walled carbon nanotubes by aromatic molecules studied by scanning tunneling microscopy
  In: physica status solidi (b) 243 (2006), S. 3213-3216
  ISSN: 0370-1972
  DOI: 10.1002/pssb.200669125
• Püsche R., Hundhausen M., Ley L., Semmelroth K., Pensl G., Desperrier P., Wellmann P., Haller EE., Ager J., Starke U.:
  Electronic Raman Studies of Shallow Donors in Silicon Carbide
  In: Materials Science Forum 527-529 (2006), S. 579
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.527-529.579
• Strobel Paul, Ristein Jürgen, Ley Lothar, Seppelt K., Goldt I.V., Boltalina Olga:
  Surface conductivity induced by fullerenes on diamond: passivation and thermal stability
  In: Diamond and Related Materials 15 (2006), S. 720
  ISSN: 0925-9635
  DOI: 10.1016/j.diamond.2005.10.034
• Ley Lothar, Ristein Jürgen, Maier Frederic, Riedel Marc, Strobel Paul:
  Surface conductivity of diamond: a novel transfer doping mechanism
  In: Physica B-Condensed Matter 376-377 (2006), S. 262
  ISSN: 0921-4526
  DOI: 10.1016/j.physb.2005.12.068
• Ristein J., Strobel P., Ley L.:
  Surface conductivity of diamond: a novel doping mechanism
  In: Advances in Science and Technology 48 (2006), S. 93
  ISSN: 1662-8969

2005

• Graupner R., Abraham J., Vencelová A., Lauffer P., Ley L., Hirsch A.:
  Fuctionalization of single-walled carbon nanotubes with organo-lithium compounds: A combined XPS, STM, and AFM study
  In: Electronic Properties of Novel Nanostructures, American Institute of Physics, 2005, S. 248-251 (AIP Conf. Proc., Bd.786)
  DOI: 10.1063/1.2103863
• Jung A., Ford W., Graupner R., Wessels J., Yasuda A., Ley L., Hirsch A.:
  Facile solubilization of single walled carbon nanotubes using a urea melt process
  In: Electronic Properties of Novel Nanostructures, American Institute of Physics, 2005, S. 207-210 (AIP Conf. Proc., Bd.786)
  DOI: 10.1063/1.2103853
• Strobel Paul, Riedel Marc, Ristein Jürgen, Ley Lothar, Boltalina Olga:
  Surface transfer doping of diamond by fullerene
  In: Diamond and Related Materials 14 (2005), S. 451
  ISSN: 0925-9635
  DOI: 10.1016/j.diamond.2004.12.051

2004

• Püsche Roland, Hundhausen Martin, Ley Lothar, Semmelroth Kurt, Schmid Frank, Pensl Gerhard, Nagasawa H.:
  Characterization of cubic bulk SiC and temperature induced polytype conversion in cubic CVD SiC studied by Raman spectroscopy
  In: Journal of Applied Physics 96 (2004), S. 5569
  ISSN: 1089-7550
• Püsche R., Hundhausen Martin, Ley Lothar, Semmelroth Kurt, Schmid Frank, Pensl Gerhard, Nagasawa H.:
  Study of the temperature induced polytype conversion in cubic SiC by Raman spectroscopy
  In: Materials Science Forum 457-460 (2004), S. 617
  ISSN: 0255-5476
• Püsche R., Hundhausen Martin, Ley Lothar, Semmelroth K., Schmid F., Pensl Gerhard:
  Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy
  In: Journal of Applied Physics 96 (2004), S. 5569
  ISSN: 0021-8979
  DOI: 10.1063/1.1803924
• Semmelroth Kurt, Krieger Michael, Pensl Gerhard, Nagasawa H., Püsche R., Hundhausen Martin, Ley Lothar, Nerding M., Strunk H. P.:
  Growth of 3C-SiC Bulk Material by the Modified Lely-Method
  In: Materials Science Forum 457-460 (2004), S. 151
  ISSN: 0255-5476
• Ristein Jürgen, Riedel Marc, Ley Lothar:
  Electrochemical surface transfer doping: the mechanism behind the surface conductivity of hydrogen terminated diamond
  In: Journal of The Electrochemical Society 151 (2004), S. E315
  ISSN: 0013-4651
  DOI: 10.1149/1.1785797
• Riedel Marc, Ristein Jürgen, Ley Lothar:
  Recovery of surface conductivity of H-terminated diamond after thermal annealing in vacuum
  In: Physical Review B 69 (2004), S. 125338
  ISSN: 0163-1829
• Strobel Paul, Riedel Marc, Ristein Jürgen, Ley Lothar:
  Surface transfer doping of diamond
  In: Nature 430 (2004), S. 439
  ISSN: 0028-0836
  DOI: 10.1038/nature02751
• Riedel Marc, Ristein Jürgen, Ley Lothar:
  The Impact of Ozone on the Surface Conductivity of Single Crystal Diamond
  In: Diamond and Related Materials 13 (2004), S. 746
  ISSN: 0925-9635
  DOI: 10.1016/j.diamond.2003.11.094

2003

• Abraham J., Whelan P., Hirsch A., Hennrich F., Kappes M., Samaille D., Bernier P., Vencelová A., Graupner R., Ley L.:
  Covalent Functionalization of Arc Discharge, Laser Ablation and HiPCO Single‐Walled Carbon Nanotubes
  In: H. Kuzmany, J. Fink, M. Mehring, S. roth (Hrsg.): Molecular Nanostructures, 2003, S. 291-296 (AIP Conf. Proc.)
  DOI: 10.1063/1.1628037
  URL: http://adsabs.harvard.edu/abs/2003AIPC..685..291A
• Wellmann P.J., Herro Z, Selder M., Durst Franz, Püsche R., Hundhausen Martin, Ley Lothar, Winnacker Albrecht:
  Investigation of mass transport during SiC PVT growth using digital X-Ray Imaging, 13C labeling of source material and numerical modeling
  In: Materials Science Forum 433-436 (2003), S. 9
  ISSN: 0255-5476
• Graupner R., Abraham J., Vencelová A., Seyller T., Hennrich F., Kappes M., Hirsch A., Ley L.:
  Doping of single-walled carbon nanotube bundles by Brønsted acids
  In: Physical Chemistry Chemical Physics 5 (2003), S. 5472-5476
  ISSN: 1463-9076
  DOI: 10.1039/b311016h
• Graupner R., Vencelová A., Ley L., Abraham J., Hirsch A., Hennrich F., Kappes M.:
  The Purification of Single-Walled Carbon Nanotubes studied by X-ray induced Photoelectron Spectroscopy
  In: H. Kuzmany, J. Fink, M. Mehring, S. Roth (Hrsg.): Molecular Nanostructures, 2003, S. 120-126
  DOI: 10.1063/1.1628000
  URL: http://adsabs.harvard.edu/abs/2003AIPC..685..120G
• Herro ZG., Wellmann P., Püsche R., Hundhausen M., Ley L., Maier M., Masri P., Winnacker A.:
  Investigation of mass transport during PVT growth of SiC by 13C labeling of source material
  In: Journal of Crystal Growth 258 (2003), S. 261-267
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(03)01538-0
• Holzinger M., Abraham J., Whelan P., Graupner R., Ley L., Hennrich F., Kappes M., Hirsch A.:
  Functionalization of single-walled carbon nanotubes with (R-)oxycarbonyl nitrenes
  In: Journal of the American Chemical Society 125 (2003), S. 8566-8580
  ISSN: 0002-7863
  DOI: 10.1021/ja029931w
• Püsche R., Hundhausen Martin, Ley Lothar:
  Raman excitation profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
  In: Materials Science Forum 433-436 (2003), S. 325
  ISSN: 0255-5476
• Herro Z., Wellmann P.J., Püsche R., Hundhausen Martin, Ley Lothar, Maier M., Masri P., Winnacker Albrecht:
  Investigation of mass transport during PVT growth of SiC by 13C labelling of source material
  In: Journal of Crystal Growth 258 (2003), S. 261
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(03)01538-0
• Steeds J. W., Evans G. A., Furkert S., Ley Lothar, Hundhausen Martin, Schulze N., Pensl Gerhard:
  Indentification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H-SiC by Photoluminescence Spectroscopy
  In: Materials Science Forum 433-436 (2003), S. 305
  ISSN: 0255-5476
• Ristein Jürgen, Riedel Marc, Ley Lothar, Takeuchi Daisuke, Okushi Hideyo:
  Band diagrams of intrinsic and p-tye diamond with hydrogenated surfaces
  In: physica status solidi (a) 199 (2003), S. 64
  ISSN: 1862-6300
• Rezek Bohuslav, Sauerer C., Nebel C.E., Stutzmann M., Ristein Jürgen, Ley Lothar, Snidero E., Bergonzo P.:
  Fermi level on hydrogen terminated diamond surfaces
  In: Applied Physics Letters 82 (2003), S. 2266
  ISSN: 0003-6951
  DOI: 10.1063/1.1564293
• Takeuchi Daisuke, Riedel Marc, Ristein Jürgen, Ley Lothar:
  Surface band bending and surface conductivity of hydrogenated diamond
  In: Physical Review B 68 (2003), S. 41304(R)
  ISSN: 0163-1829
• Vencelová A., Graupner R., Ley L., Abraham J., Holzinger M., Whelan P., Hirsch A., Hennrich F., Kappes M.:
  Purification of Single‐Walled Carbon Nanotubes Studied by STM and STS
  In: Molecular Nanostructures, 2003, S. 112-115
  URL: http://scitation.aip.org/content/aip/proceeding/aipcp/10.1063/1.1627998
• Wellmann P., Herro ZG., Selder M., Durst F., Püsche R., Hundhausen M., Ley L., Winnacker A.:
  Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling
  In: Materials Science Forum 433-436 (2003), S. 9-12
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.433-436.9

2002

• Abraham J., Hirsch A., Hennrich F., Kappes M., Dziakova A., Graupner R., Ley L.:
  The Effect of Addend Variation on the Solubility of Single-Wall Carbon Nanotubes
  In: Structural and Electronic Prpoperties of Molecular Nanostructures, 2002, S. 92-95 (AIP Conf. Proc.)
  DOI: 10.1063/1.1514081
  URL: http://adsabs.harvard.edu/abs/2002aipc..633...92a
• Walter Sebastian, Bernhardt Jens, Starke Ulrich, Heinz Klaus, Maier Florian, Ristein Jürgen, Ley Lothar:
  Geometry of the (2x1) reconstruction of diamond(111)
  In: Journal of Physics: Condensed Matter 14 (2002), S. 3085-3092
  ISSN: 0953-8984
  URL: http://www.fkp.uni-erlangen.de/literatur/abstracts_kh/240.html
• Holzinger M., Hirsch A., Hennrich F., Kappes M., Dziakova A., Ley L., Graupner R.:
  Characterization of oxidized SWCNTs by XPS
  In: H. Kuzmany; J. Fink; M. Mehring; S. Roth; (Hrsg.): Structural and Electronic Properties of Molecular Nanostructures, 2002, S. 96-99
  DOI: 10.1063/1.1514082
• Herzog B., Rohmfeld S., Hundhausen Martin, Ley Lothar, Semmelroth K., Pensl Gerhard:
  Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy
  In: Materials Science Forum 389-393 (2002), S. 625
  ISSN: 0255-5476
• S. Rohmfeld, Hundhausen Martin, Ley Lothar, C. A. Zorman, M. Mehregany:
  Quantitative evaluation of biaxial strain in epitaxial 3 C- SiC layers on Si(100) substrates by Raman spectroscopy
  In: Journal of Applied Physics 91 (2002), S. 1113
  ISSN: 0021-8979
• Evans G. A., Steeds J. W., Ley Lothar, Hundhausen Martin, Schulze N., Pensl Gerhard:
  Identification of carbon interstitials in electron irradiated 6H-SiC by use of a 13C enriched specimen
  In: Physical Review B 66 (2002), S. 035204-1
  ISSN: 0163-1829
• Ristein J., Ley L.:
  Comment on "Effect of average grain size on the work function of diamond films"
  In: Applied Physics Letters 81 (2002), S. 183
  ISSN: 0003-6951
• Ristein Jürgen, Riedel Marc, Stammler Martin, Mantel Berthold F., Ley Lothar:
  Surface conductivity of nitrogen-doped diamond
  In: Diamond and Related Materials 11 (2002), S. 359
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(02)00022-5
• Stammler M., Eisenbeiß H., Ristein J., Neubauer J., Göbbels M., Ley L., Ristein J., Ley L.:
  Growth of high-quality homoepitaxial diamond films by HF-CVD
  In: Diamond and Related Materials 11 (2002), S. 504-508
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(01)00627-6

2001

• Eisenbeiß H., Stammler M., Ristein J., Ley L., Göbbels M., Neubauer J.:
  Herstellung und Charakterisierung stickstoffreicher, qualitativ hochwertiger homo-epitaktischer Diamantfilme mittels Heißdraht-CVD
  In: European Journal of Mineralogy 13 (2001), S. 48
  ISSN: 0935-1221
• Schmidt JA, Hundhausen M, Ley L:
  Analysis of the moving photocarrier grating technique for semiconductors of high defect density
  In: Physical Review B 64 (2001)
  ISSN: 0163-1829
• Rohmfeld Stefan, Hundhausen Martin, Ley Lothar, Schulze Norbert, Pensl Gerhard:
  Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC
  In: Physical Review Letters 86 (2001), S. 826
  ISSN: 0031-9007
  DOI: 10.1103/PhysRevLett.86.826
• Stark Tanja, L. Gutowski, M. Herden, H. Grunleitner, S. Kohler, Hundhausen Martin, Ley Lothar:
  Ti-Silicide Formation During Isochronal Annealing Followed by in situ Ellipsometry
  In: Microelectronic Engineering 55 (2001), S. 101
  ISSN: 0167-9317
  DOI: 10.1016/S0167-9317(00)00434-2
• Ristein Jürgen, Maier Florian, Riedel Marc, Stammler Markus, Ley Lothar:
  Diamond surface conductivity experiments and photoelectron spectroscopy
  In: Diamond and Related Materials 10 (2001), S. 416
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(00)00555-0
• N. Sieber, B. Mantel, Seyller Thomas, Ristein Jürgen, Ley Lothar, T. Heller, D. R. Batchelor, D. Schmeisser:
  Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination
  In: Applied Physics Letters 78 (2001), S. 1216
  ISSN: 0003-6951
  DOI: 10.1063/1.1351845
• Sieber N., Mantel Berthold F., Seyller Thomas, Ristein Jürgen, Ley Lothar:
  Hydrogenation of 6H-SiC as a Surface Passivation Stable in Air
  In: Diamond and Related Materials 10 (2001), S. 1291
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(00)00529-X
• Sieber N., Seyller Thomas, Mantel Berthold F., Ristein Jürgen, Ley Lothar:
  Preparation and characterization of hydrogen terminated 6H-SiC
  In: Materials Science Forum 353-356 (2001), S. 223
  ISSN: 0255-5476
• Maier Frederic, Riedel Marc, Ristein Jürgen, Ley Lothar:
  Spectroscopic Investigations of Diamond/Hydrogen/Metal and Diamond/Metal Interfaces
  In: Diamond and Related Materials 10 (2001), S. 506
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(00)00535-5
• Ristein Jürgen, Riedel Marc, Maier Frederic, Mantel Berthold F., Stammler Martin, Ley Lothar:
  Surface Conductivity of Diamond as a Function of Nitrogen Doping
  In: physica status solidi (a) 186 (2001), S. 249
  ISSN: 1862-6300
  DOI: 10.1002/1521-396X(200108)186:23.0.CO;2-6
• Ristein Jürgen, Riedel Marc, Maier Frederic, Mantel Berthold F., Stammler Martin, Ley Lothar:
  Surface doping: a special feature of diamond
  In: Journal of Physics: Condensed Matter 13 (2001), S. 8979
  ISSN: 0953-8984
  DOI: 10.1088/0953-8984/13/40/314
• Mantel Berthold, Stammler Markus, Ristein Jürgen, Ley Lothar:
  The correlation between surface conductivity and adsorbate coverage on diamond as studied by infrared spectroscopy
  In: Diamond and Related Materials 10 (2001), S. 429
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(00)00601-4
• Ristein J., Maier F., Ley L.:
  Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces
  In: Physical Review B 64 (2001), S. 165411
  ISSN: 1098-0121

2000

• Stark Tanja, H. Grünleitner, Hundhausen Martin, Ley Lothar:
  Deriving the kinetic parameters for Pt-silicide formation from temperature ramped in situ ellipsometric measurements
  In: Thin Solid Films 358 (2000), S. 73-79
  ISSN: 0040-6090
  DOI: 10.1016/S0040-6090(99)00699-9
• Püsche Roland, S. Rohmfeld, Hundhausen Martin, Ley Lothar:
  Disappearance of the LO-Phonon line in the Raman spectrum of 6H-SiC
  In: Materials Science Forum 338-342 (2000), S. 583
  ISSN: 0255-5476
• Rohmfeld Stefan, Hundhausen Martin, Ley Lothar, Schulze Norbert, Pensl Gerhard:
  Isotope Effects on the Raman Spectrum of SiC
  In: Materials Science Forum 338-342 (2000), S. 579
  ISSN: 0255-5476
• Cui Jingbiao, Ristein Jürgen, Stammler Martin, Janischowsky Klemens, Kleber G., Ley Lothar:
  Hydrogen termination and electron emission from CVD diamond surfaces: a combined SEM, PEEM, photoelectron yield, and field emission study
  In: Diamond and Related Materials 9 (2000), S. 1143
  ISSN: 0925-9635
• Cui Jingbiao, Stammler Martin, Ristein Jürgen, Ley Lothar:
  The role of hydrogen for field emission from chemical vapour deposited diamond and nanocrystaline diamond powder
  In: Journal of Applied Physics 88 (2000), S. 3667
  ISSN: 1089-7550
• Ley Lothar, Ristein Jürgen, Graupner Ralf:
  Comment on ‘quantum confinement effect in diamond nanocrystals studied by x-ray-absorption spectroscopy’
  In: Physical Review Letters 84 (2000), S. 5679
  ISSN: 0031-9007
• Sieber Norbert, Hollering Markus, Ristein Jürgen, Ley Lothar, J. Riley, R. Leckey:
  Photoemission study of the silicate adlayer reconstruction on 6H-SiC(0001)
  In: Materials Science Forum 338-342 (2000), S. 391
  ISSN: 0255-5476
• Ristein Jürgen, Cui Jingbiao, Graupner Ralf, Maier Frederic, Riedel Marc, Mantel Berthold F., Stammler Markus, Ley Lothar:
  The role of adsorbates and defects on diamond surfaces
  In: New Diamond and Frontier Carbon Technology 10 (2000), S. 363
  ISSN: 1344-9931
• Maier Florian, Riedel Marc, Mantel B. , Ristein Jürgen, Ley Lothar:
  Origin of surface conductivity in diamond
  In: Physical Review Letters 85 (2000), S. 3472-5
  ISSN: 0031-9007
  DOI: 10.1103/PhysRevLett.85.3472
• Ristein Jürgen, Maier Florian, Riedel Marc, Cui Jingbiao, Ley Lothar:
  Surface electronic properties of diamond
  In: physica status solidi (a) 181 (2000), S. 65
  ISSN: 1862-6300
  DOI: 10.1002/1521-396X(200009)181:13.0.CO;2-Z

1999

• Maier Frederic, Graupner Ralf, Hollering Markus, Hammer Lutz, Ristein Jürgen, Ley Lothar:
  The hydrogenated and bare diamond (110) surface: a combined LEED-, XPS-, and ARPES study
  In: Surface Science 443 (1999), S. 177
  ISSN: 0039-6028
  DOI: 10.1016/S0039-6028(99)01010-9
• Zhou Shi-Ming, Hundhausen Martin, Stark Tanja, Chen L.Y., Ley Lothar:
  Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry
  In: Journal of Vacuum Science & Technology A 17 (1999), S. 144
  ISSN: 0734-2101
• Ley Lothar, Stark Tanja, Hundhausen Martin, Gruenleitner Holger:
  Modeling the evolution of ellipsometric data during the thermally induced Pt-silicide formation: activation energies and prefactors
  In Situ Process Diagnostics and Modelling (San Francisco, 6. April 1999 - 7. April 1999)
  In: Symposium. Materials Research Society 1999
• Ley Lothar, Graupner Ralf, Cui Jingbiao, Ristein Jürgen:
  Electronic properties of single crystalline diamond surfaces
  In: Carbon 37 (1999), S. 793
  ISSN: 0008-6223
  DOI: 10.1016/S0008-6223(98)00273-5
• Ley Lothar, Mantel Berthold F., Matura K., Stammler Markus, Janischowsky Klemens, Ristein Jürgen:
  Infrared spectroscopy of C-D vibrational modes on diamond (100) surfaces
  In: Surface Science 427-428 (1999), S. 245
  ISSN: 0039-6028
  DOI: 10.1016/S0039-6028(99)00273-3
• Hollering Markus, Maier Florian, Sieber Norbert, Stammler Markus, Ristein Jürgen, Ley Lothar, A. Stampfl, J. Riley, R. Leckey:
  Electronic states of an ordered oxide on C-terminated 6H-SiC
  In: Surface Science 442 (1999), S. 531
  ISSN: 0039-6028
  DOI: 10.1016/S0039-6028(99)00998-X
• Cui Jingbiao, Ristein Jürgen, Ley Lothar:
  Dehydrogenation and the surface phase transition on diamond (111): kinetics and electronic structure
  In: Physical Review B 59 (1999), S. 5847
  ISSN: 0163-1829
• Cui Jingbiao, Graupner Ralf, Ristein Jürgen, Ley Lothar:
  Electron affinity and band bending of the single crystal diamond (111) surface
  In: Diamond and Related Materials 8 (1999), S. 792
  ISSN: 0925-9635
• Cui Jingbiao, Ristein Jürgen, Ley Lothar:
  Low threshold electron emission from diamond
  In: Physical Review B 60 (1999), S. 16135
  ISSN: 0163-1829
• Graupner Ralf, Ristein Jürgen, Ley Lothar, Jung Ch.:
  Surface sensitive K-edge absorption spectroscopy of clean and hydrogen terminated diamond (111) and (100) surfaces
  In: Physical Review B 60 (1999), S. 17023
  ISSN: 0163-1829
• Stammler Martin, Ristein Jürgen, Habermann T., Janischowsky Klemens, Nau D., Müller Gerhard, Ley Lothar:
  Field emission measurements with micrometre resolution on carbon nanostructures
  In: Diamond and Related Materials 8 (1999), S. 792
  ISSN: 0925-9635

1998

• S. Rohmfeld, Hundhausen Martin, Ley Lothar:
  Raman scttering in polycrystalline 3C-SiC: influence of stacking faults
  In: Physical Review B 58 (1998), S. 9858
  ISSN: 1098-0121
• Graupner Ralf, Maier Florian, Ristein Jürgen, Ley Lothar:
  High resolution surface sensitive C1s core level spectra of clean and hydrogen terminated diamond (100) and (111) surfaces
  In: Physical Review B - Condensed Matter and Materials Physics 57 (1998), S. 12397
  ISSN: 1550-235X
• Ristein Jürgen, Stief R.T., Beyer Wolfgang Fritz, Ley Lothar:
  A comparative analysis of a-C:H by infrared spectroscopy and mass selected thermal effusion
  In: Journal of Applied Physics 84 (1998), S. 3836-3847
  ISSN: 1089-7550
  DOI: 10.1063/1.368563
• Cui Jingbiao, Ristein Jürgen, Ley Lothar:
  Electron affinity of the bare and hydrogen covered single crystal diamond (111) surface
  In: Physical Review Letters 81 (1998), S. 429-432
  ISSN: 0031-9007
  DOI: 10.1103/PhysRevLett.81.429
• Schäfer J, Ristein Jürgen, Miyazaki Seiichi, Ley Lothar:
  Formation of the interface between c-Si(111) and diamond-like carbon studied with photoelectron spectroscopy
  In: Applied Surface Science 123/124 (1998), S. 11
  ISSN: 0169-4332
• Sieber N., Ristein Jürgen, Ley Lothar:
  Mechanism of reaktive Ion etching of 6H-SiC in CHF3/O2 gas mixtures
  In: Materials Science Forum 264-268 (1998), S. 825
  ISSN: 0255-5476
• Cui Jingbiao, Amtmann K., Ristein Jürgen, Ley Lothar:
  Non contact temperature measurements of diamond by Raman spectroscopy
  In: Journal of Applied Physics 83 (1998), S. 7929
  ISSN: 1089-7550
• Ristein Jürgen, Stein W., Ley Lothar:
  Photoelectron yield spectroscopy on negative electron affinity diamond surfaces: a contactless unipolar transport experiment
  In: Diamond and Related Materials 7 (1998), S. 626
  ISSN: 0925-9635
• Ristein Jürgen, Schäfer J., Ley Lothar:
  Valence band and gap state spectroscopy of amorphous carbon by photoelectron emission techniques
  1st International Specialist Meeting on Amorphous Carbon (Singapore)
  In: Amorphous Carbon:State of the Art, Singapore: 1998

1997

• Miyazaki Seiichi, Nishimura H., Fukuda M, Ley Lothar, Ristein Jürgen:
  Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces
  In: Applied Surface Science 117/118 (1997), S. 32
  ISSN: 0169-4332
• Ristein Jürgen, Stein W., Ley Lothar:
  Defect Spectroscopy and Determination of the Electron Diffusion Length in Single Crystal Diamond by Total Photoelectron Yield Spectroscopy
  In: Physical Review Letters 78 (1997), S. 1803-1806
  ISSN: 0031-9007
• Graupner Ralf, Hollering Markus, Ziegler Anja, Ristein Jürgen, Ley Lothar, Stampfl A.:
  Dispersion of surface states on diamond (100) and (111)
  In: Physical Review B 55 (1997), S. 10841
  ISSN: 0163-1829
• Schäfer J, Ristein Jürgen, Ley Lothar:
  Electronic and structural properties of the interface between c-Si (111) and diamond like carbon
  In: Diamond and Related Materials 6 (1997), S. 730
  ISSN: 0925-9635
• Miyazaki Seiichi, Schäfer J., Ristein Jürgen, Ley Lothar:
  Implication of hydrogen-induced boron passivation in wet-chemically cleaned Si(111):H
  In: Applied Surface Science 117/118 (1997), S. 32
  ISSN: 0169-4332
• Schäfer J, Ristein Jürgen, Miyazaki Seiichi, Ley Lothar:
  Interface formation between hydrogen terminated Si (111) and amorphous hydrogenated carbon (a-C:H)
  In: Journal of Vacuum Science & Technology A 15 (1997), S. 408
  ISSN: 0734-2101

1996

• Heinrich G., Grögler T., Rosiwal S., Singer R., Stöckel R., Ley L.:
  The influence of diamond chemical vapour deposition coating parameters on the micro structure and properties of titanium substrates
  In: Diamond and Related Materials 5 (1996), S. 304-307
  ISSN: 0925-9635
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0041686948&origin=inward
• Hundhausen Martin, Nagy A., Ley Lothar:
  High field transport in the inversion layer of amorphous silicon thin film transistors
  In: Journal of Non-Crystalline Solids 198-200 (1996), S. 230
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(95)00718-0
• Hundhausen Martin, Ley Lothar, Witt C.:
  Influence of space charges on the resonant photoconductor employing a moving laser inducde grating
  In: Applied Physics Letters 69 (1996), S. 1746
  ISSN: 0003-6951
• Teuschler Thomas, Mahr K., Miyazaki Seiichi, Hundhausen Martin, Ley Lothar:
  Nanometer-scale modification of the tribological properties of Si(111):H surfaces performed and investigated by a conducting-probe scanning force microscope
  In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 14 (1996), S. 1268
  ISSN: 0734-211X
• Hundhausen Martin, Ley Lothar, Witt C.:
  Resonant photoconductor structures for the generation of microwave currents: Importance of space charges
  23rd Int. Conf. on the Physics of Semiconductors (Berlin)
  In: proc. 23rd Int. Conf. on the Physics of Semiconductors, Berlin: 1996
• Strauß Johannes, Hundhausen Martin, Ley Lothar:
  Sensitive measurement of laser induced photocarrier gratings in semiconductors by optical heterodyne detection
  23rd Int. Conf. on the Physics of Semiconductors (Berlin)
  In: proc. 23rd Int. Conf. on the Physics of Semiconductors, Berlin: 1996
• Ley Lothar, Teuschler Ralf, Mahr K., Miyazaki Seiichi, Hundhausen Martin:
  Kinetics of field induced oxidation of hydrogen terminated Si(111) by means of a scanning force micoscope
  In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 14 (1996), S. 2845
  ISSN: 0734-211X
• Ley Lothar, Ristein Jürgen, Schäfer J., Miyazaki Seiichi:
  New-surface dopant passivation after wet-chemical preparation of Si (111):H surfaces
  In: Journal of Vacuum Science & Technology B 14 (1996), S. 3008
  ISSN: 1071-1023
• Stöckel R., Janischowsky Klemens, Rohmfeld Stefan, Ristein Jürgen, Hundhausen Martin, Ley Lothar:
  Growth of diamond on silicon during the bias pretreatment in chemically vapour deposition of polycristalline diamond films
  In: Journal of Applied Physics 76 (1996), S. 768
  ISSN: 1089-7550
• Leihkamm K., Wolf Markus, Ristein Jürgen, Ley Lothar:
  Changes of the occupied density of defect states of a-Si:H upon illumination
  In: Physical Review B 53 (1996), S. 4522
  ISSN: 0163-1829
• Stief R., Schäfer J., Ristein Jürgen, Ley Lothar, Beyer Wolfgang Fritz:
  Hydrogen bonding analysis in amorphous hydrogenated carbon by a combination of infrared absorption and thermal effusion experiments
  In: Journal of Non-Crystalline Solids 198-200 (1996), S. 643
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(95)00779-2
• Schäfer J, Ristein Jürgen, Graupner Ralf, Ley Lothar, Stephan U., Frauenheim Thomas, Veerasamy V.S., Amaratunga Gehan A. J., Weiler M., Erhardt H.:
  Photoemission study of amorphous carbon modifications and comparison with calculated densities of states
  In: Physical Review B 53 (1996), S. 7762
  ISSN: 0163-1829
• Miyazaki Seiichi, Schäfer J., Ristein Jürgen, Ley Lothar:
  Surface Fermi level position of hydrogen passivated Si (111) surfaces
  In: Applied Physics Letters 68 (1996), S. 1247
  ISSN: 0003-6951
  DOI: 10.1063/1.115941
• Graupner Ralf, Ristein Jürgen, Ziegler Anja, Hollering Markus, Ley Lothar:
  Surface state dispersions on diamond (100) and (111) surfaces
  In: the Physics of Semiconductors, Singapore: World Scientific, 1996, S. 843
• Schäfer J, Ristein Jürgen, Ley Lothar, Stephan U., Frauenheim Thomas:
  The density of states of ta-C, ta-C:H and a-C:H as determined by x-ray excited photoelectron spectroscopy and molecular dynamics calculation
  In: Journal of Non-Crystalline Solids 198-200 (1996), S. 641
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(95)00780-6

1995

• Haken U., Hundhausen Martin, Ley Lothar:
  Analysis of the moving-photocarrier-grating technique for the determination of the mobility and lifetime of photocarriers in semiconductors
  In: Physical Review B 51 (1995), S. 10579
  ISSN: 0163-1829
  DOI: 10.1103/PhysRevB.51.10579
• Hundhausen M., Ley L.:
  Bipolar treatment of the electrically detected transient grating technique
  In: Applied Physics Letters 67 (1995), S. 2518
  ISSN: 0003-6951
• Weigelt G., Hundhausen Martin, Ley Lothar:
  Is persistent photoconductivity in nipi-structures of amorphous silicon due to the Staebler Wronski e
  In: Solid State Phenomena 44-46 (1995), S. 495
  ISSN: 1012-0394
• Teuschler Thomas, Mahrt-Hülbig Karin, Miyazaki Seiichi, Hundhausen Martin, Ley Lothar:
  Nanometer‐scale modification of the tribological properties of Si(100) by scanning force microscope
  In: Applied Physics Letters 66 (1995), S. 2499-2501
  ISSN: 0003-6951
  DOI: 10.1063/1.113146
• Teuschler Thomas, Mahrt-Hülbig Karin, Miyazaki Seiichi, Hundhausen Martin, Ley Lothar:
  Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics
  In: Applied Physics Letters 67 (1995), S. 3144
  ISSN: 0003-6951
  DOI: 10.1063/1.114861
• Nagy A., Hundhausen Martin, Ley Lothar, Brunst G., Holzenkämpfer E.:
  Steady-state hopping conduction in the conduction band tail of a-Si:H studied in thin
  In: Physical Review B - Condensed Matter and Materials Physics 52 (1995), S. 11289
  ISSN: 1550-235X
• Stöckel R., Janischowsky Klemens, Rohmfeld Stefan, Ristein Jürgen, Hundhausen Martin, Ley Lothar:
  Diamond growth during the bias pretreatment in microwave CVD of diamond
  In: Diamond and Related Materials 5 (1995), S. 321
  ISSN: 0925-9635
• Ristein Jürgen, Schäfer J., Ley Lothar:
  Effektive correlation energies for defects in a-C:H from a comparison of photoelectron yield and electron spin resonance experiments
  In: Diamond and Related Materials 4 (1995), S. 508
  ISSN: 0925-9635
• Ristein Jürgen, Appelt C, Gertkemper T., Ley Lothar:
  The influence of chemical annealing on the electronic properties of amorphous silicon
  Hydrogenated Amorphous Silicon
  In: Solid State Phenomena, Switzerland: 1995

1994

• Teuschler Thomas, Hundhausen Martin, Eckstein Ralf, Ley Lothar:
  Cross-Sectional Scanning Tunneling and Scanning Force Microscopy of Amorphous Hydrogenated Silicon pn-Doping-Superlattices in Nitrogen and Air
  In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 12 (1994), S. 2440
  ISSN: 0734-211X
• Teuschler Thomas, Hundhausen Martin, Ley Lothar:
  Cross-sectional scanning-tunneling-spectroscopy of a-Si:H pn-doping superlattices
  In: Superlattices and Microstructures 16 (1994), S. 271
  ISSN: 0749-6036
• Teuschler Thomas, Hundhausen Martin, Ley Lothar:
  Influence of light on individual defect noise in a-Si:H/a-SiNx:H double barrier structures
  In: Journal of Applied Physics 75 (1994), S. 2690
  ISSN: 0021-8979
  DOI: 10.1063/1.356222
• Hundhausen Martin, Haken U., Ley Lothar:
  Moving Photocarrier Grating Technique for Mobility and Lifetime Measurements in Amorphous Semiconductors
  In: Materials Research Society Symposium - Proceedings 336 (1994), S. 353
  ISSN: 0272-9172
• Graupner Ralf, Stöckel R., Janischowsky Klemens, Ristein Jürgen, Hundhausen Martin, Ley Lothar:
  The influence of surface treatment on the electronic structure of CVD diamond films
  In: Diamond and Related Materials 3 (1994), S. 891
  ISSN: 0925-9635
  DOI: 10.1016/0925-9635(94)90294-1
• Graupner Ralf, Ristein Jürgen, Ley Lothar:
  Photoelectron spectroscopy of clean and hydrogen exposed diamond (111) surfaces
  In: Surface Science 320 (1994), S. 201
  ISSN: 0039-6028
  DOI: 10.1016/0039-6028(94)00499-4

1993

• Teuschler Thomas, Hundhausen Martin, Ley Lothar, Arce R.:
  Analysis of Random telegraph noise in large-area amorphous double-barrier structures
  In: Physical Review B 47 (1993), S. 12687
  ISSN: 0163-1829
  DOI: 10.1103/PhysRevB.47.12687
• Haken U., Hundhausen Martin, Ley Lothar:
  Carrier Mobility and Lifetime in a-Si:H determined by the Moving Grating Technique
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 497
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)90598-R
• Nagy A., Hundhausen Martin, Ley Lothar, Brunst G., Holzenkämpfer E.:
  Field enhanced conductivity in a-Si:H thin film transistors
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 529
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)90606-X
• Haken U., Hundhausen Martin, Ley Lothar:
  Moving Grating Technique: A New Method for the Determination of Electron and Hole Mobilities and their Lifetime
  In: Applied Physics Letters 63 (1993), S. 3066
  ISSN: 0003-6951
  DOI: 10.1063/1.110260
• Xu S., Hundhausen Martin, Ristein Jürgen, Yan. B., Ley Lothar:
  Influence of substrate bias on the properties of a-C:H films prepared by plasma CVD
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 1127
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)91197-B
• Stöckel R., Graupner Ralf, Janischowsky Klemens, Xu S., Ristein Jürgen, Hundhausen Martin, Ley Lothar:
  Initial stages in the growth of polycrystalline diamond on silicon
  In: Diamond and Related Materials 2 (1993), S. 1467
  ISSN: 0925-9635
  DOI: 10.1016/0925-9635(93)90014-S
• Plass M.F., Ristein Jürgen, Ley Lothar:
  Electronic and structural properties of the a-Si:H/a-SiNx:H interface
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 195
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)91125-M
• Schäfer J, Ristein Jürgen, Ley Lothar:
  Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 1123
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)91196-A
• Schäfer J, Ristein Jürgen, Ley Lothar, Ibach Harald:
  High Sensitivity photoelectron yield spectroscopy with computer-calculated electron optics
  In: Review of Scientific Instruments 64 (1993), S. 653
  ISSN: 0034-6748
  DOI: 10.1063/1.1144192
• Gertkemper Th., Ristein Jürgen, Ley Lothar:
  In-situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 123
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)90507-T
• Graf Walther, Wolf Markus, Leihkamm K., Ristein Jürgen, Ley Lothar:
  Light-induced transient changes of the occupied density of defect states of a-Si:H
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 195
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)90524-2
• Graf Walther, Leihkamm K., Ristein Jürgen, Ley Lothar:
  Signature of the weak bond-dangling bond conversion process in a-Si:H as seen by total photoelectron yield spectroscopy
  Amorphous Silicon Technology (Pitsburg, 13. April 1993 - 16. April 1993)
  In: MRS Proceedings 1993

1991

• Teuschler Thomas, Hundhausen Martin, Ley Lothar, Viczian C.:
  Individual electronic defect states in a-Si:H/a-SiNx double barrier structures
  In: Journal of Non-Crystalline Solids 137&138 (1991), S. 1107
  ISSN: 0022-3093
  DOI: 10.1016/S0022-3093(05)80316-3
• Santos P., Hundhausen Martin, Ley Lothar, Viczian C.:
  Structure of interfaces in a-Si:H/a-SiNx:H superlattices
  In: Journal of Applied Physics 69 (1991), S. 778
  ISSN: 1089-7550
• Hundhausen M., Ley L.:
  The formation and stability of sub-micron clusters in silane and argon plasmas
  In: Journal of Non-Crystalline Solids 137&138 (1991), S. 795
  ISSN: 0022-3093
  DOI: 10.1016/S0022-3093(05)80240-6

1989

• Arce R., Ley Lothar, Hundhausen Martin:
  Random telegraphic noise in large area a-Si:H/a:Si1􀀀xNx double barrier structures
  In: Journal of Non-Crystalline Solids 114 (1989), S. 471
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(89)90693-5

1987

• Ley L., Hundhausen M.:
  Carrier recombination kinetics in amorphous doping superlattices
  In: Disordered semiconductors, New York & London: Plenum Press, 1987, S. n/a
  ISBN: 0306424940

1986

• Hundhausen Martin, Santos P., Ley Lothar, Habraken F., Beyer Wolfgang Fritz, Primig R., Gorges G.:
  Characterization of superlattices based on amorphous silicon
  In: Journal of Applied Physics 61 (1986), S. 556
  ISSN: 1089-7550

1985

• Santos P., Hundhausen Martin, Ley Lothar:
  Experimental evidence for Phonon folding in compositional amorphous Superlattices
  In: Journal of Non-Crystalline Solids 77&78 (1985), S. 1069
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(85)90842-7
• Hundhausen M., Ley L.:
  Model for persistent photoconductivity in doping-modulated amorphous silicon superlattices
  In: Physical Review B 32 (1985), S. 6655
  ISSN: 0163-1829
  DOI: 10.1103/PhysRevB.32.6655
• Santos P., Hundhausen Martin, Ley Lothar:
  Observation of folded-zone acoustical phonons by Raman scattering
  In: Physical Review B - Condensed Matter and Materials Physics 33 (1985), S. 1516
  ISSN: 1550-235X
• Hundhausen M., Ley L.:
  Persistent Photoconductivity in Doping-modulated amorphous silicon superlattices
  In: Journal of Non-Crystalline Solids 77&78 (1985), S. 1051
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(85)90839-7

1984

• Hundhausen Martin, Ley Lothar, Carius R.:
  Carrier Recombination in Doping-Superlattices of a-Si:H
  17th Int. Conf. on the Physics of Semiconductors (San Francisco)
  In: Proc. 17th Int. Conf. on the Physics of Semiconductors, San Francisco: 1984
• Hundhausen Martin, Ley Lothar, Carius R.:
  Carrier Recombination Times in Amorphous-Silicon Doping Superlattices
  In: Physical Review Letters 53 (1984), S. 1598
  ISSN: 0031-9007
  DOI: 10.1103/PhysRevLett.53.1598