Martin Hundhausen

2024

• Holzheu S., Hundhausen M.:
  Additional comments regarding the main article and the comment of “Pilger and Ceranna: The influence of periodic wind turbine noise on infrasound array measurements” (JSV, Vol. 388, pp. 188–200, 2017)
  In: Journal of Sound and Vibration 568 (2024), Art.Nr.: 117960
  ISSN: 0022-460X
  DOI: 10.1016/j.jsv.2023.117960

2022

• Koch S., Holzheu S., Hundhausen M.:
  Windenergieanlagen und Infraschall: Keine Evidenz für gesundheitliche Beeinträchtigungen – eine physikalische, medizinische und gesellschaftliche Einordnung
  In: Deutsche Medizinische Wochenschrift 147 (2022), S. 112-118
  ISSN: 0012-0472
  DOI: 10.1055/a-1685-5436
• Koch S., Holzheu S., Hundhausen M.:
  Wind Energy Turbines and Sound Exposure in the audible and IFLN Range: High Evidence for severe Health Disturbances according to current Studies Reply
  In: Deutsche Medizinische Wochenschrift 147 (2022), S. 1224-1227
  ISSN: 0012-0472
  DOI: 10.1055/a-1788-1091
• Swen M., Stefan H., Hundhausen M., Susanne K.:
  Can infrasound from wind turbines affect myocardial contractility? A critical review
  In: Noise & Health 24 (2022), S. 96-106
  ISSN: 1463-1741
  DOI: 10.4103/nah.nah_28_22

2019

• Kozak M., Higuchi T., McNeur J., Shiloh R., Heide C., Paschen T., Yousefi P., Sturm C., Li A., Illmer J., Meier S., Schönenberger N., Dienstbier P., Tafel A., Weber P., Zimmermann R., Seidling M., Mittelbach A., Heimerl J., Eckstein T., Hundhausen M., Ristein J., Hommelhoff P.:
  From strong-field physics in and at nanoscale matter to photonics-based laser accelerators
  XXI International Conference on Ultrafast Phenomena 2018 (UP 2018)
  In: 205 2019
  DOI: 10.1051/epjconf/201920508009
  URL: https://www.epj-conferences.org/articles/epjconf/abs/2019/10/epjconf_up2019_08009/epjconf_up2019_08009.html

2017

• Fecher FW., Buerhop-Lutz C., Pickel T., Hundhausen M., Zetzmann C., Camus C., Hauch J., Brabec C.:
  Qualitative und quantitative Auswertung regelmäßig durchgeführter aIR-Inspektionen von PV-Anlagen mit typischem PID-Muster
  32. Symposium Photovoltaische Solarenergie (Bad Staffelstein, 8. März 2017 - 10. März 2017)
  URL: https://www.researchgate.net/publication/314442905_Qualitative_und_quantitative_Auswertung_regelmassig_durchgefuhrter_aIR-Inspektionen_von_PV-Anlagen_mit_typischem_PID-Muster

2014

• Beljakowa S., Hauck M., Bockstedte MG., Fromm F., Hundhausen M., Nagasawa H., Weber HB., Pensl G., Krieger M.:
  Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures
  In: Materials Science Forum 778-780 (2014), S. 265-268
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.778-780.265

2013

• Fromm F., Oliveira MH., Molina-Sanchez A., Hundhausen M., Lopes JMJ., Riechert H., Wirtz L., Seyller T.:
  Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001)
  In: New Journal of Physics n/a (2013), S. n/a
  ISSN: 1367-2630
  DOI: 10.1088/1367-2630/15/4/043031

2012

• Ostler M., Koch R., Speck F., Fromm F., Vita H., Hundhausen M., Horn K., Seyller T.:
  Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation
  In: Materials Science Forum 717-720 (2012), S. 649
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.717-720.649

2011

• Speck F., Jobst J., Fromm F., Ostler M., Waldmann D., Hundhausen M., Weber HB., Seyller T.:
  The quasi-free-standing nature of graphene on H-saturated SiC(0001)
  In: Applied Physics Letters 9 (2011), S. 12206
  ISSN: 0003-6951
  DOI: 10.1063/1.3643034

2010

• Röhrl J., Hundhausen M., Speck F., Seyller T.:
  Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy
  In: Materials Science Forum 645-648 (2010), S. 603
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.645-648.603
• Speck F., Ostler M., Röhrl J., Emtsev K., Hundhausen M., Ley L., Seyller T.:
  Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM
  In: Physica Status Solidi (C) Current Topics in Solid State Physics 7 (2010), S. 398
  ISSN: 1862-6351
  DOI: 10.1002/pssc.200982496
• Speck F., Ostler M., Röhrl J., Jobst J., Waldmann D., Hundhausen M., Ley L., Weber HB., Seyller T.:
  Quasi-freestanding Graphene on SiC(0001)
  In: Materials Science Forum 645-648 (2010), S. 629-632
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.645-648.629

2009

• Englert J., Röhrl J., Schmidt C., Graupner R., Hundhausen M., Hauke F., Hirsch A.:
  Soluble graphene: Generation of aqueous graphene solutions aided by a perylenebisimide-based bolaamphiphile
  In: Advanced Materials 21 (2009), S. 4265-4269
  ISSN: 0935-9648
  DOI: 10.1002/adma.200901578

2008

• Hundhausen M., Püsche R., Röhrl J., Ley L.:
  Characterization of defects in silicon carbide by Raman spectroscopy
  In: physica status solidi (b) 254 (2008), S. 1356
  ISSN: 0370-1972
  DOI: 10.1002/pssb.200844052
• Röhrl J., Hundhausen M., Emtsev K., Seyller T., Graupner R., Ley L.:
  Raman spectra of epitaxial graphene on SiC(0001)
  In: Applied Physics Letters 92 (2008), S. 201918
  ISSN: 0003-6951
  DOI: 10.1063/1.2929746
• Röhrl J., Hundhausen M., Emtsev K., Seyller T., Ley L.:
  Graphene layers on silicon carbide studied by Raman spectroscopy
  In: Materials Science Forum 600-603 (2008), S. 567
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.600-603.567
• Syrgiannis Z., Hauke F., Röhrl J., Hundhausen M., Graupner R., Elemes Y., Hirsch A.:
  Covalent sidewall functionalization of SWNTs by nucleophilic addition of lithium amides
  In: European Journal of Organic Chemistry (2008), S. 2544-2550
  ISSN: 1434-193X
  DOI: 10.1002/ejoc.200800005

2007

• Semmelroth K., Krieger M., Pensl G., Nagasawa H., Püsche R., Hundhausen M., Ley L., Nerding M., Strunk HP.:
  Growth of cubic SiC single crystals by the physical vapor transport technique
  In: Journal of Crystal Growth 308 (2007), S. 241-246
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2007.07.060

2006

• Graupner R., Abraham J., Wunderlich D., Vencelová A., Lauffer P., Röhrl J., Hundhausen M., Ley L., Hirsch A.:
  Nucleophilic-alkylation-reoxidation: A functionalization sequence for single-wall carbon nanotubes
  In: Journal of the American Chemical Society 128 (2006), S. 6683-6689
  ISSN: 0002-7863
  DOI: 10.1021/ja0607281
• Püsche R., Hundhausen M., Ley L., Semmelroth K., Pensl G., Desperrier P., Wellmann P., Haller EE., Ager J., Starke U.:
  Electronic Raman Studies of Shallow Donors in Silicon Carbide
  In: Materials Science Forum 527-529 (2006), S. 579
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.527-529.579

2005

• Wellmann P., Herro ZG., Winnacker A., Püsche R., Hundhausen M., Masri P., Kulik A., Bogdanov M., Karpov S., Ramm M., Makarov Y.:
  In situ visualization of SiC physical vapor transport crystal growth
  In: Journal of Crystal Growth 275 (2005), S. e1807–e1812
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2004.11.253

2004

• Püsche Roland, Hundhausen Martin, Ley Lothar, Semmelroth Kurt, Schmid Frank, Pensl Gerhard, Nagasawa H.:
  Characterization of cubic bulk SiC and temperature induced polytype conversion in cubic CVD SiC studied by Raman spectroscopy
  In: Journal of Applied Physics 96 (2004), S. 5569
  ISSN: 1089-7550
• Püsche R., Hundhausen Martin, Ley Lothar, Semmelroth Kurt, Schmid Frank, Pensl Gerhard, Nagasawa H.:
  Study of the temperature induced polytype conversion in cubic SiC by Raman spectroscopy
  In: Materials Science Forum 457-460 (2004), S. 617
  ISSN: 0255-5476
• Püsche R., Hundhausen Martin, Ley Lothar, Semmelroth K., Schmid F., Pensl Gerhard:
  Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy
  In: Journal of Applied Physics 96 (2004), S. 5569
  ISSN: 0021-8979
  DOI: 10.1063/1.1803924
• Semmelroth Kurt, Krieger Michael, Pensl Gerhard, Nagasawa H., Püsche R., Hundhausen Martin, Ley Lothar, Nerding M., Strunk H. P.:
  Growth of 3C-SiC Bulk Material by the Modified Lely-Method
  In: Materials Science Forum 457-460 (2004), S. 151
  ISSN: 0255-5476

2003

• Wellmann P.J., Herro Z, Selder M., Durst Franz, Püsche R., Hundhausen Martin, Ley Lothar, Winnacker Albrecht:
  Investigation of mass transport during SiC PVT growth using digital X-Ray Imaging, 13C labeling of source material and numerical modeling
  In: Materials Science Forum 433-436 (2003), S. 9
  ISSN: 0255-5476
• Herro ZG., Wellmann P., Püsche R., Hundhausen M., Ley L., Maier M., Masri P., Winnacker A.:
  Investigation of mass transport during PVT growth of SiC by 13C labeling of source material
  In: Journal of Crystal Growth 258 (2003), S. 261-267
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(03)01538-0
• Püsche R., Hundhausen Martin, Ley Lothar:
  Raman excitation profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
  In: Materials Science Forum 433-436 (2003), S. 325
  ISSN: 0255-5476
• Herro Z., Wellmann P.J., Püsche R., Hundhausen Martin, Ley Lothar, Maier M., Masri P., Winnacker Albrecht:
  Investigation of mass transport during PVT growth of SiC by 13C labelling of source material
  In: Journal of Crystal Growth 258 (2003), S. 261
  ISSN: 0022-0248
  DOI: 10.1016/S0022-0248(03)01538-0
• Steeds J. W., Evans G. A., Furkert S., Ley Lothar, Hundhausen Martin, Schulze N., Pensl Gerhard:
  Indentification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H-SiC by Photoluminescence Spectroscopy
  In: Materials Science Forum 433-436 (2003), S. 305
  ISSN: 0255-5476
• Wellmann P., Herro ZG., Selder M., Durst F., Püsche R., Hundhausen M., Ley L., Winnacker A.:
  Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling
  In: Materials Science Forum 433-436 (2003), S. 9-12
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.433-436.9

2002

• Herzog B., Rohmfeld S., Hundhausen Martin, Ley Lothar, Semmelroth K., Pensl Gerhard:
  Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy
  In: Materials Science Forum 389-393 (2002), S. 625
  ISSN: 0255-5476
• S. Rohmfeld, Hundhausen Martin, Ley Lothar, C. A. Zorman, M. Mehregany:
  Quantitative evaluation of biaxial strain in epitaxial 3 C- SiC layers on Si(100) substrates by Raman spectroscopy
  In: Journal of Applied Physics 91 (2002), S. 1113
  ISSN: 0021-8979
• Evans G. A., Steeds J. W., Ley Lothar, Hundhausen Martin, Schulze N., Pensl Gerhard:
  Identification of carbon interstitials in electron irradiated 6H-SiC by use of a 13C enriched specimen
  In: Physical Review B 66 (2002), S. 035204-1
  ISSN: 0163-1829

2001

• Pensl Gerhard, Stephani Dietrich, Hundhausen Martin (Hrsg.):
  Silicon Carbide and Related Materials (ECSCRM 2000)
  Uetikon-Zuerich: 2001
  (Materials Science Forum, Bd. 353-356)
  ISBN: 0-87849-873-7
• Schmidt JA, Hundhausen M, Ley L:
  Analysis of the moving photocarrier grating technique for semiconductors of high defect density
  In: Physical Review B 64 (2001)
  ISSN: 0163-1829
• Rohmfeld Stefan, Hundhausen Martin, Ley Lothar, Schulze Norbert, Pensl Gerhard:
  Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC
  In: Physical Review Letters 86 (2001), S. 826
  ISSN: 0031-9007
  DOI: 10.1103/PhysRevLett.86.826
• Stark Tanja, L. Gutowski, M. Herden, H. Grunleitner, S. Kohler, Hundhausen Martin, Ley Lothar:
  Ti-Silicide Formation During Isochronal Annealing Followed by in situ Ellipsometry
  In: Microelectronic Engineering 55 (2001), S. 101
  ISSN: 0167-9317
  DOI: 10.1016/S0167-9317(00)00434-2

2000

• Stark Tanja, H. Grünleitner, Hundhausen Martin, Ley Lothar:
  Deriving the kinetic parameters for Pt-silicide formation from temperature ramped in situ ellipsometric measurements
  In: Thin Solid Films 358 (2000), S. 73-79
  ISSN: 0040-6090
  DOI: 10.1016/S0040-6090(99)00699-9
• Püsche Roland, S. Rohmfeld, Hundhausen Martin, Ley Lothar:
  Disappearance of the LO-Phonon line in the Raman spectrum of 6H-SiC
  In: Materials Science Forum 338-342 (2000), S. 583
  ISSN: 0255-5476
• Rohmfeld Stefan, Hundhausen Martin, Ley Lothar, Schulze Norbert, Pensl Gerhard:
  Isotope Effects on the Raman Spectrum of SiC
  In: Materials Science Forum 338-342 (2000), S. 579
  ISSN: 0255-5476

1999

• Schulze N., Barrett D., Pensl Gerhard, Rohmfeld S., Hundhausen Martin:
  Near-thermal equilibrium growth of SiC by physical vapor transport
  In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 61-62 (1999), S. 44
  ISSN: 0921-5107
• Zhou Shi-Ming, Hundhausen Martin, Stark Tanja, Chen L.Y., Ley Lothar:
  Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry
  In: Journal of Vacuum Science & Technology A 17 (1999), S. 144
  ISSN: 0734-2101
• Ley Lothar, Stark Tanja, Hundhausen Martin, Gruenleitner Holger:
  Modeling the evolution of ellipsometric data during the thermally induced Pt-silicide formation: activation energies and prefactors
  In Situ Process Diagnostics and Modelling (San Francisco, 6. April 1999 - 7. April 1999)
  In: Symposium. Materials Research Society 1999

1998

• S. Rohmfeld, Hundhausen Martin, Ley Lothar:
  Raman scttering in polycrystalline 3C-SiC: influence of stacking faults
  In: Physical Review B 58 (1998), S. 9858
  ISSN: 1098-0121

1997

• Poczik I., Koos M., Moustafa S.M., Andar J.A., Berkesi O., Hundhausen Martin:
  Comparative Raman studies of amorphous carbon films using infra red and visible excitation
  In: Microchimica Acta 14 (1997), S. 755
  ISSN: 0026-3672

1996

• Hundhausen M.:
  The moving photocarrier grating technique for the determination of transport parameters in thin film semiconductors
  In: Journal of Non-Crystalline Solids 198-200 (1996), S. 146
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(95)00667-2
• Hundhausen Martin, Nagy A., Ley Lothar:
  High field transport in the inversion layer of amorphous silicon thin film transistors
  In: Journal of Non-Crystalline Solids 198-200 (1996), S. 230
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(95)00718-0
• Hundhausen Martin, Ley Lothar, Witt C.:
  Influence of space charges on the resonant photoconductor employing a moving laser inducde grating
  In: Applied Physics Letters 69 (1996), S. 1746
  ISSN: 0003-6951
• Teuschler Thomas, Mahr K., Miyazaki Seiichi, Hundhausen Martin, Ley Lothar:
  Nanometer-scale modification of the tribological properties of Si(111):H surfaces performed and investigated by a conducting-probe scanning force microscope
  In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 14 (1996), S. 1268
  ISSN: 0734-211X
• Hundhausen Martin, Ley Lothar, Witt C.:
  Resonant photoconductor structures for the generation of microwave currents: Importance of space charges
  23rd Int. Conf. on the Physics of Semiconductors (Berlin)
  In: proc. 23rd Int. Conf. on the Physics of Semiconductors, Berlin: 1996
• Strauß Johannes, Hundhausen Martin, Ley Lothar:
  Sensitive measurement of laser induced photocarrier gratings in semiconductors by optical heterodyne detection
  23rd Int. Conf. on the Physics of Semiconductors (Berlin)
  In: proc. 23rd Int. Conf. on the Physics of Semiconductors, Berlin: 1996
• Ley Lothar, Teuschler Ralf, Mahr K., Miyazaki Seiichi, Hundhausen Martin:
  Kinetics of field induced oxidation of hydrogen terminated Si(111) by means of a scanning force micoscope
  In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 14 (1996), S. 2845
  ISSN: 0734-211X
• Stöckel R., Janischowsky Klemens, Rohmfeld Stefan, Ristein Jürgen, Hundhausen Martin, Ley Lothar:
  Growth of diamond on silicon during the bias pretreatment in chemically vapour deposition of polycristalline diamond films
  In: Journal of Applied Physics 76 (1996), S. 768
  ISSN: 1089-7550

1995

• Haken U., Hundhausen Martin, Ley Lothar:
  Analysis of the moving-photocarrier-grating technique for the determination of the mobility and lifetime of photocarriers in semiconductors
  In: Physical Review B 51 (1995), S. 10579
  ISSN: 0163-1829
  DOI: 10.1103/PhysRevB.51.10579
• Hundhausen M., Ley L.:
  Bipolar treatment of the electrically detected transient grating technique
  In: Applied Physics Letters 67 (1995), S. 2518
  ISSN: 0003-6951
• Weigelt G., Hundhausen Martin, Ley Lothar:
  Is persistent photoconductivity in nipi-structures of amorphous silicon due to the Staebler Wronski e
  In: Solid State Phenomena 44-46 (1995), S. 495
  ISSN: 1012-0394
• Teuschler Thomas, Mahrt-Hülbig Karin, Miyazaki Seiichi, Hundhausen Martin, Ley Lothar:
  Nanometer‐scale modification of the tribological properties of Si(100) by scanning force microscope
  In: Applied Physics Letters 66 (1995), S. 2499-2501
  ISSN: 0003-6951
  DOI: 10.1063/1.113146
• Teuschler Thomas, Mahrt-Hülbig Karin, Miyazaki Seiichi, Hundhausen Martin, Ley Lothar:
  Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics
  In: Applied Physics Letters 67 (1995), S. 3144
  ISSN: 0003-6951
  DOI: 10.1063/1.114861
• Nagy A., Hundhausen Martin, Ley Lothar, Brunst G., Holzenkämpfer E.:
  Steady-state hopping conduction in the conduction band tail of a-Si:H studied in thin
  In: Physical Review B - Condensed Matter and Materials Physics 52 (1995), S. 11289
  ISSN: 1550-235X
• Stöckel R., Janischowsky Klemens, Rohmfeld Stefan, Ristein Jürgen, Hundhausen Martin, Ley Lothar:
  Diamond growth during the bias pretreatment in microwave CVD of diamond
  In: Diamond and Related Materials 5 (1995), S. 321
  ISSN: 0925-9635

1994

• Witt C., Haken U., Hundhausen Martin:
  Determination of the Photocarrier Lifetime in Amorphous Silicon with the Moving Photocarrier Grating Technique
  In: Japanese Journal of Applied Physics 33 (1994), S. L1809
  ISSN: 0021-4922
• Teuschler Thomas, Hundhausen Martin, Eckstein Ralf, Ley Lothar:
  Cross-Sectional Scanning Tunneling and Scanning Force Microscopy of Amorphous Hydrogenated Silicon pn-Doping-Superlattices in Nitrogen and Air
  In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 12 (1994), S. 2440
  ISSN: 0734-211X
• Teuschler Thomas, Hundhausen Martin, Ley Lothar:
  Cross-sectional scanning-tunneling-spectroscopy of a-Si:H pn-doping superlattices
  In: Superlattices and Microstructures 16 (1994), S. 271
  ISSN: 0749-6036
• Teuschler Thomas, Hundhausen Martin, Ley Lothar:
  Influence of light on individual defect noise in a-Si:H/a-SiNx:H double barrier structures
  In: Journal of Applied Physics 75 (1994), S. 2690
  ISSN: 0021-8979
  DOI: 10.1063/1.356222
• Hundhausen Martin, Haken U., Ley Lothar:
  Moving Photocarrier Grating Technique for Mobility and Lifetime Measurements in Amorphous Semiconductors
  In: Materials Research Society Symposium - Proceedings 336 (1994), S. 353
  ISSN: 0272-9172
• Graupner Ralf, Stöckel R., Janischowsky Klemens, Ristein Jürgen, Hundhausen Martin, Ley Lothar:
  The influence of surface treatment on the electronic structure of CVD diamond films
  In: Diamond and Related Materials 3 (1994), S. 891
  ISSN: 0925-9635
  DOI: 10.1016/0925-9635(94)90294-1

1993

• Teuschler Thomas, Hundhausen Martin, Ley Lothar, Arce R.:
  Analysis of Random telegraph noise in large-area amorphous double-barrier structures
  In: Physical Review B 47 (1993), S. 12687
  ISSN: 0163-1829
  DOI: 10.1103/PhysRevB.47.12687
• Haken U., Hundhausen Martin, Ley Lothar:
  Carrier Mobility and Lifetime in a-Si:H determined by the Moving Grating Technique
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 497
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)90598-R
• Nagy A., Hundhausen Martin, Ley Lothar, Brunst G., Holzenkämpfer E.:
  Field enhanced conductivity in a-Si:H thin film transistors
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 529
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)90606-X
• Haken U., Hundhausen Martin, Ley Lothar:
  Moving Grating Technique: A New Method for the Determination of Electron and Hole Mobilities and their Lifetime
  In: Applied Physics Letters 63 (1993), S. 3066
  ISSN: 0003-6951
  DOI: 10.1063/1.110260
• Xu S., Hundhausen Martin, Ristein Jürgen, Yan. B., Ley Lothar:
  Influence of substrate bias on the properties of a-C:H films prepared by plasma CVD
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 1127
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)91197-B
• Stöckel R., Graupner Ralf, Janischowsky Klemens, Xu S., Ristein Jürgen, Hundhausen Martin, Ley Lothar:
  Initial stages in the growth of polycrystalline diamond on silicon
  In: Diamond and Related Materials 2 (1993), S. 1467
  ISSN: 0925-9635
  DOI: 10.1016/0925-9635(93)90014-S

1991

• Teuschler Thomas, Hundhausen Martin, Ley Lothar, Viczian C.:
  Individual electronic defect states in a-Si:H/a-SiNx double barrier structures
  In: Journal of Non-Crystalline Solids 137&138 (1991), S. 1107
  ISSN: 0022-3093
  DOI: 10.1016/S0022-3093(05)80316-3
• Santos P., Hundhausen Martin, Ley Lothar, Viczian C.:
  Structure of interfaces in a-Si:H/a-SiNx:H superlattices
  In: Journal of Applied Physics 69 (1991), S. 778
  ISSN: 1089-7550
• Hundhausen M., Ley L.:
  The formation and stability of sub-micron clusters in silane and argon plasmas
  In: Journal of Non-Crystalline Solids 137&138 (1991), S. 795
  ISSN: 0022-3093
  DOI: 10.1016/S0022-3093(05)80240-6

1989

• Hundhausen M.:
  Thermally stimulated Conductivity in a-Si:H Doping superlattices
  In: Journal of Non-Crystalline Solids 114 (1989), S. 720
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(89)90699-6
• Arce R., Ley Lothar, Hundhausen Martin:
  Random telegraphic noise in large area a-Si:H/a:Si1􀀀xNx double barrier structures
  In: Journal of Non-Crystalline Solids 114 (1989), S. 471
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(89)90693-5

1988

• Hundhausen Martin, Ichiguchi T., Shiraki Y.:
  Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface
  In: Applied Physics Letters 53 (1988), S. 110
  ISSN: 0003-6951
  DOI: 10.1063/1.100384

1987

• Ichiguchi T., Hundhausen Martin, Shiraki Y.:
  Multiple quantum wires in GaAs/GaAlAs
  In: Extended abstracts of the 48th Autum meeting of the Jap. Soc. of Appl. Phys. 1987
• Ley L., Hundhausen M.:
  Carrier recombination kinetics in amorphous doping superlattices
  In: Disordered semiconductors, New York & London: Plenum Press, 1987, S. n/a
  ISBN: 0306424940

1986

• Hundhausen Martin, Santos P., Ley Lothar, Habraken F., Beyer Wolfgang Fritz, Primig R., Gorges G.:
  Characterization of superlattices based on amorphous silicon
  In: Journal of Applied Physics 61 (1986), S. 556
  ISSN: 1089-7550

1985

• Santos P., Hundhausen Martin, Ley Lothar:
  Experimental evidence for Phonon folding in compositional amorphous Superlattices
  In: Journal of Non-Crystalline Solids 77&78 (1985), S. 1069
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(85)90842-7
• Hundhausen M., Ley L.:
  Model for persistent photoconductivity in doping-modulated amorphous silicon superlattices
  In: Physical Review B 32 (1985), S. 6655
  ISSN: 0163-1829
  DOI: 10.1103/PhysRevB.32.6655
• Santos P., Hundhausen Martin, Ley Lothar:
  Observation of folded-zone acoustical phonons by Raman scattering
  In: Physical Review B - Condensed Matter and Materials Physics 33 (1985), S. 1516
  ISSN: 1550-235X
• Hundhausen M., Ley L.:
  Persistent Photoconductivity in Doping-modulated amorphous silicon superlattices
  In: Journal of Non-Crystalline Solids 77&78 (1985), S. 1051
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(85)90839-7

1984

• Hundhausen Martin, Ley Lothar, Carius R.:
  Carrier Recombination in Doping-Superlattices of a-Si:H
  17th Int. Conf. on the Physics of Semiconductors (San Francisco)
  In: Proc. 17th Int. Conf. on the Physics of Semiconductors, San Francisco: 1984
• Hundhausen Martin, Ley Lothar, Carius R.:
  Carrier Recombination Times in Amorphous-Silicon Doping Superlattices
  In: Physical Review Letters 53 (1984), S. 1598
  ISSN: 0031-9007
  DOI: 10.1103/PhysRevLett.53.1598

1983

• Hundhausen M.:
  Defect States in a-Si:Nx:H
  In: Journal of Non-Crystalline Solids 59&60 (1983), S. 601
  ISSN: 0022-3093